Ensemble Monte Carlo study of channel quantization in a 25-nm n-MOSFET

Williams, S.C.; Kim, K.W.; Holton, W. C.

doi:10.1109/16.870564

Cited by 14 publications

(6 citation statements)

References 35 publications

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“…The effective mass approximation (EMA) is almost universally used both in the semiclassical transport models [24]- [28] and in several recent studies that employ a quantum transport treatment [12], [13], [29]. In the semiclassical picture, the band structure at each section of the device is obtained by solving the 1-D quantization problem set by the confining potential energy in the direction normal to the semiconductor-oxide interface.…”

Section: Validity Of the Parabolic Effective Mass Approximation In Simentioning

confidence: 99%

“…In this case, when a parabolic energy dispersion is assumed in the quantization direction, the EMA results in a Schrödingerlike equation in the real space that provides the minima of the subbands. Then, an analytic energy dispersion in the transport plane (i.e., as a function of the 2-D wave vector k) is added to the subband minimum [24], [26]- [28]. Thus, in such an EMA model, the quantization produces a shift in the subband minima; while, it does not affect the energy dispersion inside each subband.…”

Section: Validity Of the Parabolic Effective Mass Approximation In Simentioning

confidence: 99%

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Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

Steen

Esseni

Palestri

et al. 2007

IEEE Trans. Electron Devices

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This paper investigates the validity of the parabolic effective mass approximation (EMA), which is almost universally used to describe the size and bias-induced quantization in n-MOSFETs. In particular, we compare the EMA results with a full-band quantization approach based on the linear combination of bulk bands (LCBB) and study the most relevant quantities for the modeling of the mobility and of the on-current of the devices, namely, the minima of the 2-D subbands, the transport masses, and the electron density of states. Our study deals with both silicon and germanium n-MOSFETs with different crystal orientations and shows that, in most cases, the validity of the EMA is quite satisfactory. The LCBB approach is then used to calculate the values of the effective masses that help improve the EMA accuracy. There are crystal orientations, however, where the 2-D energy dispersion obtained by the LCBB method exhibits features that are difficult to reproduce with the EMA model.

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Section: Validity Of the Parabolic Effective Mass Approximation In Simentioning

confidence: 99%

Section: Validity Of the Parabolic Effective Mass Approximation In Simentioning

confidence: 99%

Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

Steen

Esseni

Palestri

et al. 2007

IEEE Trans. Electron Devices

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“…We here just mention that the Multi Subband Monte Carlo (MSMC) has been successfully used for both n-MOS [31][32][33][34][35][36] and p-MOS transistors [37,38], and it has been employed even for nanowire transistors [39]. Recently, remarkable progresses were made in the deterministic, as opposed to statistical, solution of the BTE for quasi-1D nanowire transistors [39], but also for nanoscale MOSFETs [40].…”

Section: Transport In Nano-scale Mosfets: Determination Of I Dsmentioning

confidence: 99%

Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering

et al. 2009

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This paper reviews the basic methodologies and models used in the semi-classical modelling of CMOS transistors in the framework of the nowadays generalized scaling scenario. The capabilities to describe devices with arbitrary crystal orientations and strain configurations are discussed. Several simulation results are illustrated and compared to the experiments to assess the understanding of the underlying physics and the predictive capabilities of the models. A case study concerning the drain currents in nano-scale uniaxially strained MOSFETs is presented and it shows how the strain engineering may change the traditional on-current disadvantage of the p-MOS compared to the n-MOS transistors.

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“…Ensemble Monte-Carlo (EMC) code have been introduced to follow the motion of an ensemble of electrons, typically several thousands, simultaneously inside bulk materials. Later, EMC codes found a wide range of application in the simulation of semiconductor devices [7][8][9][10]. One-dimensional and two-dimensional Monte-Carlo codes have been investigated to analyze semiconductor devices.…”

Section: Monte-carlo Simulationmentioning

confidence: 99%

“…The drift-diffusion model [1][2][3], hydrodynamic models [4][5][6], and Monte-Carlo code [7][8][9][10] are considered as the most popular and efficient physical noise simulators. They are able to determine the current-voltage characteristics, the smallsignal parameters, and the terminal current and voltage fluctuations which results from the internally generated noise inside the device.…”

Section: Introductionmentioning

confidence: 99%

Performance limits of simulation models for noise characterization of mm-wave devices

Abou‐Elnour

2007

SPIE Proceedings

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Based on Boltzmann transport equation, the drift-diffusion, hydrodynamic, and Monte-Carlo physical models are accurately developed. The model equations are self-consistently solved with Poisson equation, and with Schrödinger equation when quantization effects take place, in one and two-dimensions to characterize the operation and optimize the structure of mm-wave devices. The effects of the devices dimensions, biasing conditions and operating frequencies on the accuracy of the obtained model (simulator) results are thoroughly investigated. Based on physical understanding of the models, the simulation results are analyzed and conclusions are drawn to fully determine the limits at which a certain device simulator can be accurately and efficiently used to characterize the noise behaviour of mm-wave devices.

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Ensemble Monte Carlo study of channel quantization in a 25-nm n-MOSFET

Cited by 14 publications

References 35 publications

Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering

Performance limits of simulation models for noise characterization of mm-wave devices

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