Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors

Parakh, Mehul; Pokharel, Rabin; Dawkins, Kendall; Devkota, Shisir; Li, J.; Iyer, Shanthi

doi:10.1039/d2na00359g

Cited by 6 publications

(5 citation statements)

References 43 publications

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“…Next, the following material and device characterizations were chosen to comprehensively consider the influence of various growth processes on the morphological and optical quality of p-i-n NW heterostructure and their cumulative impact on the device operation, similar to our previous work in this area [12,25,31,32]. NW morphology and composition were assessed using the energy dispersive x-ray spectroscopy integrated to Carl-Zeiss Auriga field emission scanning electron microscope.…”

Section: Methodsmentioning

confidence: 99%

Heterostructure axial GaAsSb ensemble near-infrared p–i–n based axial configured nanowire photodetectors

et al. 2023

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In this work, we present a systematic design of growth experiments and subsequent characterization of self-catalyzed molecular beam epitaxially grown GaAsSb heterostructure axial p-i-n nanowires (NWs) on p-Si <111> for the ensemble photodetector (PD) application in the near-infrared (NIR) region. Diverse growth methods have been explored to gain a better insight into mitigating several growth challenges by systematically studying their impact on the NW electrical and optical properties to realize a high-quality p-i-n heterostructure. The successful growth approaches are Te-dopant compensation to suppress the p-type nature of intrinsic GaAsSb segment, growth interruption for strain relaxation at the interface, decreased substrate temperature to enhance supersaturation and minimize the reservoir effect, higher bandgap compositions of the n-segment of the heterostructure relative to the intrinsic region for boosting the absorption, and the high-temperature ultra-high vacuum in-situ annealing to reduce the parasitic radial overgrowth. The efficacy of these methods is supported by enhanced photoluminescence (PL) emission, suppressed dark current in the heterostructure p-i-n NWs accompanied by increased rectification ratio, photosensitivity, and a reduced low-frequency noise level. The PD fabricated utilizing the optimized GaAsSb axial p-i-n NWs exhibited the longer wavelength cutoff at ~ 1.1 µm with a significantly higher responsivity of ~ 120 A/W (@-3 V bias) and a detectivity of 1.1 ×10^13 Jones operating at room temperature. Frequency and the bias independent capacitance in the pico-Farad (pF) range and substantially lower noise level at the reverse biased condition, show the prospects of p-i-n GaAsSb NWs PD for high-speed optoelectronic applications.

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Section: Methodsmentioning

confidence: 99%

Heterostructure axial GaAsSb ensemble near-infrared p–i–n based axial configured nanowire photodetectors

et al. 2023

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“…While the observed gain and spectral sensing are significant, the observed V BR is much higher than that reported in the literature in vertical ensemble NW APDs. 1,24,27 Further decrease in device dark current and device consistency features is possible via pattered growth of these heterostructures. Since the growth mechanism of the NWs is non-selective, axial variation in the thickness of individual growth segments can be pronounced due to the shadowing effect, 53 along with thickness disparity among the NWs.…”

Section: S10t and H30mentioning

confidence: 99%

“…A work on GaAs CS nanoneedle APDs by Chuang et al 24 showcases high avalanche multiplication at RT at a significantly lower breakdown voltage. Parakh et al 27 recently demonstrated an axially configured ensemble of NW APDs, with a low breakdown voltage and significant gain exceeding 200 at RT on an arsenide-antimonide system. It is evident that most of the prior work is dedicated to arsenide material systems, with no reports on antimonide material systems in the CS NW configuration despite its promising application wavelength range in the NIR region.…”

Section: ■ Introductionmentioning

confidence: 99%

GaAs/GaAsSb Core–Shell Configured Nanowire-Based Avalanche Photodiodes up to 1.3 μm Light Detection

Pokharel

Kuchoor

Parakh

et al. 2023

ACS Appl. Nano Mater.

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We report the first study on a GaAs/GaAsSb core−shell (CS)-configured nanowire (NW)-based separate absorption, charge control, and multiplication region avalanche photodiode (APD) operating in the near-infrared (NIR) region. Heterostructure NWs consisted of GaAs and tunable band gap GaAs 1−x Sb x serving as the multiplication and absorption layers, respectively. A doping compensation of absorber material to boost material absorption, segment-wise annealing to suppress trap-assisted tunneling, and an intrinsic i-type and n-type combination of the hybrid axial core to suppress axial electric field are successfully adopted in this work to realize a room-temperature (RT) avalanche photodetection extending up to 1.3 μm. In an APD device operating at RT with a unity-gain responsivity of 0.2−0.25 A/W at ∼5 V, the peak gain of 160 @ 1064 nm and 18 V reverse bias, gain >50 @ 1.3 μm, are demonstrated. Thus, this work provides a foundation and prospects for exploiting greater freedom in NW photodiode design using hybrid axial and CS heterostructures.

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“…Furthermore, the unique advantage of NW-SPAD is that low dark count rate performance can be maintained despite operating near room temperature, thanks to its nanoscale size and high material quality [22]. Over the past decade, although many linear-mode NW-APDs have been reported [23][24][25][26][27][28][29][30][31][32], there is only one report on nanowire APDs operating above their breakdown voltage (i.e. NW-SPADs or Geiger-mode NW-APDs) [21], because of the stringent requirement in epitaxial growth and device fabrication of these types of nanowire devices.…”

Section: Introductionmentioning

confidence: 99%

An efficient modeling workflow for high-performance nanowire single-photon avalanche detector

Li,

Tan,

Jagadish

et al. 2024

Nanotechnology

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Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in developing next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire SPDs utilizing avalanche breakdown at reverse-biased conditions. The proposed workflow is explored to maximize computational efficiency and balance time-consuming drift-diffusion simulation with fast script-based post-processing. Without excessive computational effort, we could predict a suite of key device performance metrics, including breakdown voltage, dark/light avalanche built-up time, photon detection efficiency, dark count rate, and the deterministic part of timing jitter due to device structures. Implementing the proposed workflow onto a single InP nanowire and comparing it to the extensively studied planar devices and superconducting nanowire SPDs, we showed the great potential of nanowire avalanche SPD to outperform their planar counterparts and obtain as superior performance as superconducting nanowires, i.e., achieve a high photon detection efficiency of 70% with a dark count rate less than 20 Hz at non-cryogenic temperature. The proposed workflow is not limited to single-nanowire or nanowire-based device modeling and can be readily extended to more complicated two-/three dimensional structures.

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Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors

Abstract: In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche photodetector device on non-patterned Si substrate is presented.

Cited by 6 publications

References 43 publications

Heterostructure axial GaAsSb ensemble near-infrared p–i–n based axial configured nanowire photodetectors

Heterostructure axial GaAsSb ensemble near-infrared p–i–n based axial configured nanowire photodetectors

GaAs/GaAsSb Core–Shell Configured Nanowire-Based Avalanche Photodiodes up to 1.3 μm Light Detection

An efficient modeling workflow for high-performance nanowire single-photon avalanche detector

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