2023
DOI: 10.1016/j.ceramint.2022.11.216
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Enhancing the thermoelectric power factor of nanostructured SnO2 via Bi substitution

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Cited by 7 publications
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“…Tin oxide (SnO 2 ) is an n-type semiconductor characterized by a wide band gap (∼3.6 eV) and electron mobility of 160 cm 2 V −1 s −1 at room temperature (RT) as a result of Sn interstitial defects and oxygen vacancies [9][10][11]. The incorporation of 3d transition metal (M) into SnO 2 to form M/SnO 2 composites is commonly utilized to reduce their particle size and hence enhance their physical and chemical properties [12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…Tin oxide (SnO 2 ) is an n-type semiconductor characterized by a wide band gap (∼3.6 eV) and electron mobility of 160 cm 2 V −1 s −1 at room temperature (RT) as a result of Sn interstitial defects and oxygen vacancies [9][10][11]. The incorporation of 3d transition metal (M) into SnO 2 to form M/SnO 2 composites is commonly utilized to reduce their particle size and hence enhance their physical and chemical properties [12][13][14].…”
Section: Introductionmentioning
confidence: 99%