2019
DOI: 10.1021/acsami.9b18757
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Enhancing the Open-Circuit Voltage of Perovskite Solar Cells by Embedding Molecular Dipoles within Their Hole-Blocking Layer

Abstract: Engineering the energetics of perovskite photovoltaic devices through the deliberate introduction of dipoles to control the built-in potential of the devices offers the opportunity to enhance their performance without the need to modify the active layer itself. In this work, we demonstrate how the incorporation of molecular dipoles into the bathocuproine (BCP) hole-blocking layer of inverted perovskite solar cells improves the device open-circuit voltage (VOC) and consequently, its performance. We explore a se… Show more

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Cited by 32 publications
(29 citation statements)
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“…It can be seen that the (WF = 4.42 eV) of M‐PTAA is ≈100 meV smaller than that of R‐PTAA (WF = 4.52 eV), which corresponds to a smaller built‐in potential in a photovoltaic (PV) device. [ 31 ] On the other hand, the energy difference (Δ E ) between the Fermi level (FL) and the highest occupied molecular orbital (HOMO) level of M‐PTAA is 0.65 eV, which is 150 meV larger than that of R‐PTAA (0.5 eV). The increase in Δ E comes from the electron injection from ITO to the HOMO level of PTAA, which annihilates the free carriers in PTAA and increases its resistance.…”
Section: Resultsmentioning
confidence: 99%
“…It can be seen that the (WF = 4.42 eV) of M‐PTAA is ≈100 meV smaller than that of R‐PTAA (WF = 4.52 eV), which corresponds to a smaller built‐in potential in a photovoltaic (PV) device. [ 31 ] On the other hand, the energy difference (Δ E ) between the Fermi level (FL) and the highest occupied molecular orbital (HOMO) level of M‐PTAA is 0.65 eV, which is 150 meV larger than that of R‐PTAA (0.5 eV). The increase in Δ E comes from the electron injection from ITO to the HOMO level of PTAA, which annihilates the free carriers in PTAA and increases its resistance.…”
Section: Resultsmentioning
confidence: 99%
“…[118] Interfacial engineering can serve different purposes such as passivation of interfacial defects, [119,120] suppression of ion migration [121,122] or interfacial reactions, [123][124][125] and compensation of unsatisfactory energetic alignment. [126,127] Many of these strategies can be adopted to thermally evaporated perovskites, so long as the materials used can be deposited by thermal evaporation. Potentially, thermally deposited devices might even hold an advantage, due to the possibility to deposit complex multilayered devices without limitations such as solvent orthogonality that restrict the possible combinations of materials that can be deposited from solution.…”
Section: Photovoltaic Performancementioning
confidence: 99%
“…The improved V bi can originate from the interfacial band alignment induced by MEA passivation with an interfacial dipole layer, which directs the dipole moment away from the TiO 2 surface. [ 22,32 ] Therefore, the incorporation of MEA between the m‐TiO 2 film and perovskite spontaneously improves V oc in the passivated device.…”
Section: Resultsmentioning
confidence: 99%