“…The lowest point of the conduction band and the highest point of the valence band of the LaAlO 3 matrix are located at point G, and the bottom of the conduction band and the top of the valence band of the MLTO matrix are located at point D, indicating that both phosphors are direct bandgap materials. The bandgap width of the MLTO sample is derived from the Tauc curve with the following equation
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where α is the absorption coefficient, hν represents the photon energy, and K is a constant. n with a value of 2 or 1/2 indicates that the sample is a direct or indirect bandgap semiconductor.…”