active layer thickness range from 100 to 400 nm. [18] For large area and high speed roll-to-roll printing, e.g., with 1−2 m width and at 1−3 m s −1 , an ideal active layer should not only display an outstanding PCE at an optimal thickness, but also maintain enough high PCEs when a big thickness variation would occur, so as to supply a necessary thickness window for yield control of PSC products. [19][20][21][22] Small efficiency variations for different film thicknesses, such as PCEs between 5.3% and 6.9% for 84−370 nm range, [19] 6.5%−7.6% for 100−440 nm, [21] and 6.8%−8.3% for 80−400 nm range, [22] have been reported for several photovoltaic materials. Very recently, much higher PCEs between 10.2% and 10.8% were reported for relatively narrow thickness range from 300 to 400 nm. [23] Based on the solution printing criteria, the PTB7:PC 71 BM active layer would be far away from a suitable candidate, according to the present performances.Currently, thermal annealing, [24] solvent vapor annealing (SVA), [22,25] and solvent additive [26] are the typical methods for morphology optimizations of active layers. Since the discovery of great potential of alkanedithiols as solvent additives to improve the morphology and to elevate PCE of BHJ PSCs, [27] effective morphology controls with some new solvent additives such as alkanedihalides (e.g., 1,8-diiodooctane (DIO) in Figure 1), [28] 1-substituted naphthalenes, [29][30][31] benzene derivatives, [32][33][34][35] 3-substituted thiophenes, [36] oligo-ethylene glycols, [37] N-susbstituted-2-pyrrolidones, [37] and polydimethylsiloxane [38] have been demonstrated for active layers based on various donor materials.So far, DIO has become the most widely selected solvent additive for the morphology optimization. [39] It should be noted that, in the past years, several champion efficiencies of BHJ PSCs were achieved when active layers were solutionprocessed with DIO as the solvent additive. [9,10,40] Generally, DIO is a good solvent for fullerene acceptors and a non-solvent for most polymer donors, based on Hansen solubility parameters. [41] DIO possesses a boiling point (bp.) of 332.5 °C, much higher than 132.2 and 180.5 °C for chlorobenzene (CB) and o-dichlorobenzene, respectively, two common host solvents for solution processing of many active layers (Figure 1). During spin-coating of a blend solution containing the DIO additive, removing of a host solvent is very quick, and the donor phase establishes earlier than the acceptor phase because DIO still remains in the neighbor of fullerene domains. In an additional process to remove DIO, such as vacuum drying or inert solvent washing, [42,43] the acceptor phase established finally, from which donor and acceptor phases with good nanoscale phase Adv. Energy