Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

“…Two-dimensional (2D) layered materials are recognized as potential prospects in the fields of electronics and optoelectronics owing to their striking physical characteristics. [1][2][3][4][5][6] 2D materials have established a significant deal of devotion in the fields of spintronics, [7][8][9][10][11][12] electronics, [13][14][15][16][17] and optoelectronics. 15,[18][19][20][21][22][23][24] Scientists were sure that heat fluctuation made it difficult for nanoparticles to maintain stability, which ultimately caused a breakdown.…”

“…[1][2][3][4][5][6] 2D materials have established a significant deal of devotion in the fields of spintronics, [7][8][9][10][11][12] electronics, [13][14][15][16][17] and optoelectronics. 15,[18][19][20][21][22][23][24] Scientists were sure that heat fluctuation made it difficult for nanoparticles to maintain stability, which ultimately caused a breakdown. The thermally stable graphene in this scenario has greatly surprised scientists, spurring the rapid growth of the 2D materials research field over the past few decades.…”

“…[59][60][61] Most InSe-based optoelectronic devices are transistor-based, necessitating strong electrical bias gating and bias voltage. 58,62,63 In another class, depending on the layer thickness, 2D transition metal dichalcogenide (TMDC) [15][16][17]20,24,64,65 materials have band gaps between 1 and 2 eV. A broad range of applications, including photodetectors, 66,67 are possible owing to the band gap variation between multilayer and monolayer direct gaps 68,69 and field-effect transistor (FET), 16,65,[70][71][72][73] as well as optical communication.…”

Gate-tunable rectification and photoresponse in a MoTe2/SnS2 van der Waals heterostructure based P–N diode

“…1,2 Because of their customized energy band alignments and ultrathin structural characteristics, van der Waals (vdW) heterojunctions established on thin 2D materials have ushered in a new era for next-generation optoelectronics. 3 Graphene has received a great deal of attention in the fields of spintronics, [4][5][6] electronics, 7 and optoelectronics. 7,8 In another class, depending on the layer thickness, 2D transition metal dichalcogenide (TMDC) materials have band gaps between 1 eV and 2.5 eV.…”

“…3 Graphene has received a great deal of attention in the fields of spintronics, [4][5][6] electronics, 7 and optoelectronics. 7,8 In another class, depending on the layer thickness, 2D transition metal dichalcogenide (TMDC) materials have band gaps between 1 eV and 2.5 eV. A broad range of applications, including photodetectors, 9,10 field-effect transistors, 11,12 flexible devices, 13 logic circuits, 14 and optical communication, 15,16 are possible due to the band gap variation between the multilayer indirect gap and the monolayer direct gap.…”