Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side Wall

Mei, Yuan; Tseng, Yi-Ting; Chen, Po-Hsun; Shih, Chih‐Cheng; Huang, Hui‐Chun; Chang, Ting‐Chang; Cui, Xiaole; Lin, Xinnan; Zhang, Shengdong; Zhou, Hang

doi:10.1109/jeds.2018.2833504

Cited by 19 publications

(10 citation statements)

References 18 publications

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“…Figure a displays the core level spectra of Ta 4f. The Ta 4f spectrum confirms the doublet peaks of about 24 eV (Ta 4f 7/2 ) and 26.5 eV (Ta 4f 5/2 ), corresponding to Ta–O bonds from the top TaO x layer. , …”

Section: Resultssupporting

confidence: 52%

“…The Ta 4f spectrum confirms the doublet peaks of about 24 eV (Ta 4f 7/2 ) and 26.5 eV (Ta 4f 5/2 ), corresponding to Ta−O bonds from the top TaO x layer. 49,50 Figure 3b depicts the doublet peaks of about 1023 eV (Zn 2p 3/2 ) and 1046 eV (Zn 2p 1/2 ), corresponding to the Zn−O bonds, and Figure 3c shows doublet peaks of 487.5 (Sn 3d 5/2 ) and 597 eV (Sn 3d 3/2 ), corresponding to Sn−O bonds, both from the bottom ZTO layer. 40−42 The XPS spectra of Ta 4f, Zn 2p, and Sn 3d confirm that there are no interfacial reactions between the TaO x and ZTO layers.…”

Section: Resultsmentioning

confidence: 99%

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Highly Efficient Invisible TaO_x/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

Kumar

Shrivastava

Saleem

et al. 2022

ACS Appl. Electron. Mater.

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In today’s new era, multifunctional devices are most prominent due to their compact design, reduction in operating cost, and reduced need of being limited to single functional devices. The electronic synapses and electro-optic functions of the device are such a cornerstone for neuromorphic computing and image sensing applications. In this work, we fabricate a ZTO-based invisible memristor for simulating the human brain for neuromorphic computing and image sensing applications. Long-term potentiation and depressionat least 790repetitive cycles are observed which ensures the synaptic strength. The first-principles density functional theory calculations give insights into the device’s microscopic charge density distribution and switching mechanism. The experimental potentiation and depression data are used to train the Hopfield neural network (HNN) for image recognition of 28 × 28 pixels comprising 784 synapses. The HNN can be successfully trained to identify the input image with a training accuracy of more than 96% in 17 iterations. Furthermore, the device shows excellent highly stable electrical set and optical reset endurance for at least 1500 cycles without degradation, good retention (104 s) at 90 °C, and high transparency (∼85%). This work not only enables us to use our device in artificial intelligence but also provides a significant advantage in the field of image sensing.

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Section: Resultssupporting

confidence: 52%

Section: Resultsmentioning

confidence: 99%

Highly Efficient Invisible TaO_x/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

Kumar

Shrivastava

Saleem

et al. 2022

ACS Appl. Electron. Mater.

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“…Ag + , after reaching the BE, get reduced and finally form a localized conductive path, resulting in the flow of higher currents and producing lower resistance values. 27 Moreover, at the same instant, the device abruptly changes its state from HRS to LRS, considered to be the SET state of the memory device, which is clearly shown in Figure 4c. As the polarity of the applied voltage reverses, at one particular voltage, namely, V reset , a very high electric field is generated in the opposite direction to the previous state, leading to a breakdown of the formed metallic filament bridge; i.e., Ag gets redistributed at the near boundaries of the BE, and then instantly the device switches its state from LRS to HRS, which is illustrated in Figure 4d.…”

Section: ■ Results and Discussionmentioning

confidence: 96%

“…At these higher electric fields, there will be a soft breakdown of the dielectric strength of V 2 O 5 , leading to the formation of some defect sites producing V 5+ , and O 2– and Ag + quickly start to hop from the TE to BE. Ag + , after reaching the BE, get reduced and finally form a localized conductive path, resulting in the flow of higher currents and producing lower resistance values . Moreover, at the same instant, the device abruptly changes its state from HRS to LRS, considered to be the SET state of the memory device, which is clearly shown in Figure c.…”

Section: Resultsmentioning

confidence: 96%

V₂O₅ Nanosheets for Flexible Memristors and Broadband Photodetectors

Yalagala

Sahatiya

Kolli

et al. 2019

ACS Appl. Nano Mater.

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The synthesis of vanadium oxide family compounds is challenging because of their affinity to exist in different oxidation states and is further intensified by the lack of suitable techniques for their direct growth on flexible substrates, thus limiting their applications in flexible electronics. In this report, we demonstrate the one-step fabrication of a two-dimensional (2D) V2O5-based versatile papertronics (paper electronics) platform on a low-cost cellulose paper substrate and its application toward broadband photodetection and resistive memories. The porous nature of cellulose paper helps in the uniform growth of 2D V2O5 not only on the surface but also in bulk, thereby assisting in the easy diffusion of silver ions (Ag+) in the defect sites of V2O5, unlike in conventional flexible polymeric substrates, thereby assisting in the resistive switching mechanism. 2D V2O5 on a cellulose-paper-based memory exhibited an ON/OFF ratio of 3.5 × 102 and V set and V reset voltages of ∼+1 and −1 V, respectively, with excellent endurance and retention capacity of up to 500 cycles. The synthesized 2D V2O5 nanosheets exhibited broadband absorption ranging from ultraviolet (UV) to visible with an optical band gap calculated as 2.4 eV, making it suitable for broadband photodetection. Responsivities under UV- and visible-light illumination were found to be 31.5 and 20.2 mA/W, respectively, which are better than those of V2O5-based photodetectors fabricated using sophisticated methods. The fabricated broadband photodetector exhibited excellent mechanical stability with excellent retention in responsivity values over 500 cycles. The strategy outlined here presents a novel, low-cost, and one-step approach for fabricating devices on paper that find wide applications in flexible electronics.

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“…As the via size decreases, the forming electric field (E Forming ) of the pure HfO 2 device rises. 24,25) By doping Ag into the switching layer, the critical electric field of the switching layer can be effectively reduced. Therefore, the E Forming of the Ag-doped device will not rise as the device size scales down, meaning that there is no size effect that occurs in the Ag-doped device.…”

mentioning

confidence: 99%

Realizing forming-free characteristic by doping Ag into HfO₂-based RRAM

Wu¹,

Lin²,

Chen³

et al. 2021

Appl. Phys. Express

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In this work, Ag-doped HfO2-based resistive random access memory (RRAM) with high on-off ratio, low-power consumption and forming-free properties was investigated. We propose the fabrication flow of the RRAM with via-hole structure. After doping Ag into HfO2 as the switching layer, the devices could execute resistive switching without a high-voltage forming process. The conduction mechanism was subsequently validated by a current fitting analysis. Electric field simulation was also utilized to observe the electric field distribution and finally a physical model was proposed to provide an explanation for the formation and dissolution of the filament.

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Enhancing the Electrical Uniformity and Reliability of the HfO₂-Based RRAM Using High-Permittivity Ta₂O₅ Side Wall

Cited by 19 publications

References 18 publications

Highly Efficient Invisible TaO_x/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

Highly Efficient Invisible TaO_x/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

V₂O₅ Nanosheets for Flexible Memristors and Broadband Photodetectors

Realizing forming-free characteristic by doping Ag into HfO₂-based RRAM

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Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side Wall

Cited by 19 publications

References 18 publications

Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

V2O5 Nanosheets for Flexible Memristors and Broadband Photodetectors

Realizing forming-free characteristic by doping Ag into HfO2-based RRAM

Contact Info

Product

Resources

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Enhancing the Electrical Uniformity and Reliability of the HfO₂-Based RRAM Using High-Permittivity Ta₂O₅ Side Wall

Highly Efficient Invisible TaO_x/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

Highly Efficient Invisible TaO_x/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

V₂O₅ Nanosheets for Flexible Memristors and Broadband Photodetectors

Realizing forming-free characteristic by doping Ag into HfO₂-based RRAM