Enhancing the electrical parameters of ZnO films deposited using a low-cost chemical spray technique through Ta doping

Ravichandran, K.; Subha, K.; Dineshbabu, N.; Manivasaham, A.

doi:10.1016/j.jallcom.2015.09.115

Cited by 34 publications

(13 citation statements)

References 57 publications

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“…The effect of both the decreased grain size and the change in the shape of the crystals in the ZnO:Ta-doped films was also observed and reported by different authors [40,41,[56][57][58], and it was in agreement with our experiments. This effect could be owing to the fact that tantalum atoms create a EDS results on Ta-doped ZnO samples (Figure 10b) indicate that it was a Zn-rich ZnO material, but there was also a clear contribution of the tantalum element around of 0.1% and 0.15% in atomic percentage (±0.5% in weight), this could be owing to the fact that tantalum atoms are mainly incorporated inside the lattice of ZnO, but no over surface of the structures obtained.…”

Section: Sem and Eds Studiessupporting

confidence: 93%

“…The effect of both the decreased grain size and the change in the shape of the crystals in the ZnO:Ta-doped films was also observed and reported by different authors [40,41,[56][57][58], and it was in agreement with our experiments. This effect could be owing to the fact that tantalum atoms create a compression stress inside the lattice of ZnO, and they prevents an increase in these big shapes, as generated by the difference of ionic radii between Zn and Ta, as commented before in the XRD results.…”

Section: Sem and Eds Studiessupporting

confidence: 93%

“…The mobility (Figure 13a) initially increased, with Ta 2 O 5 reaching a maximum value in the film fabricated with 50 mg of Ta 2 O 5 in the source; after that, it started to decrease. This effect has also been observed by Subha et al [57,58], and is attributed to an excess of carriers in the ZnO lattice. A small increment observed in mobility, was owing to a high number of free carriers that were generated by tantalum atoms, and the relatively greater crystal size of the shell.…”

Section: Hall Measurementssupporting

confidence: 78%

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Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

et al. 2018

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Tantalum-doped ZnO structures (ZnO:Ta) were synthesized, and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pellet made of a mixture of ZnO and Ta2O5 powders, and molecular hydrogen was used as a reactant gas. The percentage of tantalum varied from 0 to 500 mg by varying the percentages of tantalum oxide in the mixture of the pellet source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase, and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without doping, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by energy dispersive X-ray spectrometry (EDS), and X-ray diffraction (XRD) measurements. From scanning electron microscopy (SEM) images from undoped samples, mostly micro-sized semi-spherical structures were seen, while doped samples displayed a trend to grow as nanocrystalline rods. The presence of tantalum during the synthesis affected the growth direction. Green photoluminescence was observed by the naked eye when Ta-doped samples were illuminated by ultraviolet radiation and confirmed by photoluminescence (PL) spectra. The PL intensity on the Ta-doped ZnO increased from those undoped samples up to eight times.

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Section: Sem and Eds Studiessupporting

confidence: 93%

“…The effect of both the decreased grain size and the change in the shape of the crystals in the ZnO:Ta-doped films was also observed and reported by different authors [40,41,[56][57][58], and it was in agreement with our experiments. This effect could be owing to the fact that tantalum atoms create a compression stress inside the lattice of ZnO, and they prevents an increase in these big shapes, as generated by the difference of ionic radii between Zn and Ta, as commented before in the XRD results.…”

Section: Sem and Eds Studiessupporting

confidence: 93%

Section: Hall Measurementssupporting

confidence: 78%

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Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

et al. 2018

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“…Further, it has excellent electrical, optical properties and thermal stability. [10][11][12][13][14][15][16][17] Among them, ZnO with Ta doping (TaZO) seems to be very scarce, but promising material due to its noticeable transport characteristics. Therefore, doped zinc oxide films have gained the materials scientists' attention, for the replacement of ITO films, as they can exhibit low electrical resistivity and high optical transmission in the visible spectrum range when compared with pristine ZnO.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a novel low-cost triple layer system (TaZO/Ag/TaZO) with an enhanced quality factor for transparent electrode applications

Ravichandran¹,

Subha²,

Manivasaham³

et al. 2016

RSC Adv.

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A triple layer system (TaZO/Ag/TaZO) consists of tantalum doped zinc oxide (TaZO) as the top and bottom layers and metallic silver (Ag) as the intermediate layer was deposited onto glass substrates. The top and bottom layers were deposited using an inexpensive homemade Automated Jet Nebulizer Spray Technique (AJNSP) and the intermediate Ag layer was deposited using thermal evaporation technique. Three different sets of samples with top and bottom layers having thickness values around 50, 75 and 100 nm were prepared keeping the thickness of the middle layer constant (15 nm). The influence of thickness on structural,electrical, optical and photoluminescence properties along with surface morphology of the deposited triple layer system was studied. Structural study revealed that the deposited films have hexagonal wurzite structure of ZnO and x-ray photoelectron spectroscopic study confirms the presence of the expected elements in the system. Optical studies show that the overall thickness of the films influences only marginally the transmittance of the films. The decrease in sheet resistance with the increase in thickness is explained on the basis of grain boundary scattering mechanism. Among all the films examined, the multi-layer film with 75+15+75 nm thickness exhibits best quality factor (8.98 × 10 -3 (Ω/sq.) -1 ), which may be considered as a potential candidate for transparent electrode applications. To the best of our knowledge, this is the first report in which a low cost chemical technique is employed to fabricate a triple layered system. ________________________________________________________________________________________________________________

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“…is due to the recombination of the holes with the electrons from the donor level of singly ionized oxygen vacancies [46]. Thus the intensity of this blue emission peak generally represents the number of oxygen vacancies in the system.…”

Section: Photoluminescence Studiesmentioning

confidence: 99%

Effect of fluorine (an anionic dopant) on transparent conducting properties of Sb (a cationic) doped ZnO thin films deposited using a simplified spray technique

Ravichandran¹,

Dineshbabu²,

Arun

et al. 2016

Materials Research Bulletin

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Enhancing the electrical parameters of ZnO films deposited using a low-cost chemical spray technique through Ta doping

Cited by 34 publications

References 57 publications

Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD

Fabrication of a novel low-cost triple layer system (TaZO/Ag/TaZO) with an enhanced quality factor for transparent electrode applications

Effect of fluorine (an anionic dopant) on transparent conducting properties of Sb (a cationic) doped ZnO thin films deposited using a simplified spray technique

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