Enhancing Stability and Resistive Memory Performance: The Role of Graphene in Hybrid Perovskite Composites

Abstract

Stability and performance retention are the two basic issues associated with halide perovskite-based electronic devices, and various efforts have been adopted to resolve these. A novel and one-step approach is lacking to enhance the device performance along with stability. Herein, we have cross-linked an organic–inorganic hybrid halide perovskite (FAPbBr3) with a graphene sheet, and the composite system is applied as a functional matrix in a resistive memory device. In situ synthesis of the graphene–perovskite composite enabled strong interaction between the two-dimensional graphene sheets and three-dimensional perovskite, which not only provided a moisture barrier to the surface of the perovskite but also enhanced the charge transport. X-ray photoelectron spectroscopy manifested the robust H2O resistance of the perovskite in the presence of graphene, and substantial stability of the composite system-based device could be observed after 15 days of ambient storage. Strong photoluminescence quenching in the case of the graphene–perovskite composite system signified the additional energy transfer channel for effective charge transport. This enhanced charge transfer observed in the graphene–perovskite composite system enabled improvement in switching the speed (SET, from 480 to 190 ns) of the memory device.