Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs

Source/Drain Activation for Flexible Poly-Si Nanoscale pFETs with a Laser-Buffer Layer by CO2 laser Annealing

“…The interface and oxide properties of the nano-fFETs can be continuously deteriorated with time due to hot carrier injection at the high V d . The interface deterioration is caused by hot carrier impact and the oxide deterioration is due to hot carrier injection from the inversion layer to the gate oxide 29,30 The V th shift of the devices demonstrates two stages of degradation with the stress time for both the flexible devices as shown in Fig. 5b.…”