Enhancing light harvesting in planar halide perovskite film solar cells by silicon nanorods

Jiang, Zhaoyi; Zhang, Weijia; Lu, Chaoqun; Ni, Cong; Liu, Haixu; Yu, Wei

doi:10.1016/j.ceramint.2019.04.221

Cited by 3 publications

(1 citation statement)

References 36 publications

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“…Besides, the high-cost of Si wafers restricts its cost-competitiveness, engendering a need for an alternative type of thinner Si wafers with reduced costs and performance improvements. Because of this, novel Si nanostructures have been fabricated and demonstrated over the years, including silicon nanotubes [ 4 ], silicon nanowires [ 1 , 2 , 3 , 5 ], silicon nanocones [ 6 , 7 ], silicon nanorods [ 8 ], silicon nanoholes [ 9 , 10 ], silicon nanocrystals [ 5 , 11 ] and silicon nanopillars [ 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

Efficient Diode Performance with Improved Effective Carrier Lifetime and Absorption Using Bismuth Nanoparticles Passivated Silicon Nanowires

et al. 2022

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In this paper, we report a novel design of bismuth nanoparticle-passivated silicon nanowire (Bi@SiNW) heterojunction composites for high diode performances and improved effective carrier lifetime and absorption properties. High-density vertically aligned SiNWs were fabricated using a simple and cost-effective silver-assisted chemical etching method. Bi nanoparticles (BiNPs) were then anchored in these nanowires by a straightforward thermal evaporation technique. The systematic study of the morphology, elemental composition, structure, and crystallinity provided evidence for the synergistic effect between SiNWs and BiNPs. Bi@SiNWs exhibited an eight-fold enhancement of the first-order Raman scattering compared to bare silicon. Current–voltage characteristics highlighted that bismuth treatment dramatically improved the rectifying behavior and diode parameters for Bi-passivated devices over Bi-free devices. Significantly, Bi wire-filling effectively increased the minority carrier lifetime and consequently reduced the surface recombination velocity, further indicating the benign role of Bi as a surface passivation coating. Furthermore, the near-perfect absorption property of up to 97% was achieved. The findings showed that a judicious amount of Bi coating is required. In this study the reasons behind the superior improvement in Bi@SiNW’s overall properties were elucidated thoroughly. Thus, Bi@SiNW heterojunction nanocomposites could be introduced as a promising and versatile candidate for nanoelectronics, photovoltaics and optoelectronics.

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