Enhancing Device Performance with High Electron Mobility GeSn Materials
Yannik Junk,
Omar Concepción,
Marvin Frauenrath
et al.
Abstract:As transistors continue to shrink, the need to replace silicon with materials of higher carrier mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys, stand out for their high electron and hole mobilities, making them attractive for next‐generation electronics. While Ge p‐channel devices already possess a high hole mobility, here the focus is on enhancing n‐channel transistor performance by utilizing the superior electron mobility of GeSn as channel material. Vertical gate‐all‐ar… Show more
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