2017
DOI: 10.1016/j.actamat.2017.06.036
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Enhancement of thermoelectric properties in liquid-phase sintered Te-excess bismuth antimony tellurides prepared by hot-press sintering

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Cited by 40 publications
(28 citation statements)
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“…The room‐temperature electrical conductivity of the BST:T film is 42% higher than that of the BST film. It is believed that the tellurium addition results in: I) diminished carrier scattering due to improved interfacial connections between BST particles, and II) an increased carrier (hole) concentration consistent with previous reports, which is closely related to the modulation of antisites (Sb Te‐ and Bi Te‐ ) and anion vacancy (V Te 2+ ) defects in the BST matrix . In order to confirm the change of carrier concentration and mobility, room‐temperature Hall measurements were performed on a series of flexible films.…”
Section: Resultssupporting
confidence: 78%
“…The room‐temperature electrical conductivity of the BST:T film is 42% higher than that of the BST film. It is believed that the tellurium addition results in: I) diminished carrier scattering due to improved interfacial connections between BST particles, and II) an increased carrier (hole) concentration consistent with previous reports, which is closely related to the modulation of antisites (Sb Te‐ and Bi Te‐ ) and anion vacancy (V Te 2+ ) defects in the BST matrix . In order to confirm the change of carrier concentration and mobility, room‐temperature Hall measurements were performed on a series of flexible films.…”
Section: Resultssupporting
confidence: 78%
“…Such high electrical conductivities have been previously measured in samples processed in an excess of tellurium and have been related to two main factors: 23,26 i) an increase (over materials with similar Bi/Sb ratios) of the hole concentration associated to a modification of the antisite and vacancy defects due to the tellurium excess; ii) formation during the liquid phase sintering of semicoherent grain boundaries having a minimal effect on hole scattering. 23 Hall measurements of a series of hot-pressed Bi0.5Sb1.5Te3 nanomaterials showed the charge carrier concentrations to be around 54 x10 19 cm -3 , i.e.…”
mentioning
confidence: 64%
“…For p‐type (Bi,Sb) 2 Te 3 materials, a peak zT > 1.2 can be readily realized by nanostructuring 4d,i,6. Recently, the liquid‐phase sintering (LPS) process, which involves sintering under conditions where solid grains are surrounded by the wetting liquid, is also successfully applied to enhance the TE properties of p‐type Bi 2 Te 3 ‐based alloys 2a,4e,8. Nanoscale defects such as dense dislocations4e or Sb‐rich region8b could be introduced during LPS and play important roles in reducing κ L .…”
Section: Introductionmentioning
confidence: 99%