2007
DOI: 10.1063/1.2756037
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Enhancement of thermoelectric figure of merit of AgTlTe by tuning the carrier concentration

Abstract: The authors tried to enhance the thermoelectric figure of merit of AgTlTe with extremely low thermal conductivity by controlling the carrier concentration. Pd- or Cu-doped AgTlTe was prepared and characterized. Pd did not dissolve in AgTlTe, whereas Cu fully dissolved up to x=0.4 in Ag1−xCuxTlTe. The effect of Cu doping was investigated by measuring the thermoelectric properties of polycrystalline Ag1−xCuxTlTe (x=0−0.4) from room temperature to slightly below the melting temperature. Cu doping resulted in a ne… Show more

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Cited by 18 publications
(19 citation statements)
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References 17 publications
(8 reference statements)
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“…In addition, it was also confirmed that the Ä lat of AuTe 2 was quite low with rather flat temperature dependence. The Ä lat values were ∼0.35 W m −1 K −2 , comparable to those of ternary silver tellurides with extremely low Ä lat [7,8].…”
Section: Resultsmentioning
confidence: 51%
See 1 more Smart Citation
“…In addition, it was also confirmed that the Ä lat of AuTe 2 was quite low with rather flat temperature dependence. The Ä lat values were ∼0.35 W m −1 K −2 , comparable to those of ternary silver tellurides with extremely low Ä lat [7,8].…”
Section: Resultsmentioning
confidence: 51%
“…In addition, complex tellurides containing Ag such as Ag 9 TlTe 5 [7], AgTlTe [8], * Corresponding author. Tel.…”
Section: Introductionmentioning
confidence: 99%
“…30,31 There have been several studies demonstrating how the transport phenomenon can be tuned by optimization of carrier concentration for further enhancement of ZT in existing high performance TE materials. [44][45][46] Kurosaki et al 45 observed an enhancement in ZT of AgTlTe by tuning the carrier concentration via Cu doping. They observed a signicant increase in the power factor in AgTlTe without increasing the k by doping with 40% Cu, nally leading to a drastic increase in ZT from 0.3 to 0.6.…”
Section: 23mentioning
confidence: 99%
“…Thermoelectric properties of Ag 12x GaTe 2 with chalcopyrite structure Aikebaier Yusufu, 1 Ken Kurosaki, 1,a) Atsuko Kosuga, 2 Tohru Sugahara, 1 Yuji Ohishi, 1 Hiroaki Muta, 1 and Shinsuke Yamanaka 1,3 1 Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan 2 Nanoscience and Nanotechnology Research Center, Research Organization for the 21st Century, Osaka Prefecture University, 1-2 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8570, Japan In the present study, we investigated the high-temperature thermoelectric (TE) properties of AgGaTe 2 with chalcopyrite structure. We tried to enhance the TE properties of AgGaTe 2 by reducing the Ag content.…”
mentioning
confidence: 99%