Enhancement of thermoelectric efficiency in Bi2Te3 via rare earth element doping

Ivanov, О. N.; Yaprintsev, Maxim; Lyubushkin, R. A.; Soklakova, O. N.

doi:10.1016/j.scriptamat.2017.11.031

Cited by 52 publications

(43 citation statements)

References 25 publications

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“…As the annealing time increases, Sb 2 Te 3 prefers crystallization and Te crystal growth, resulting in a decrease of interfacial density, so as the α. Te crystal size in A1 is smaller than that in A2, meaning a higher interfacial density with larger lattice strain in A1. Increase of m * in A1 than that in A2 can be related to the band with a high and sharp DOS near the Fermi level, which is closely related to ETT . For the same reason, reduced κ e in A1 is also predicated and proved experimentally in the following part.…”

Section: Resultsmentioning

confidence: 61%

“…Increase of m* in A1 than that in A2 can be related to the band with a high and sharp DOS near the Fermi level, which is closely related to ETT. [55] For the same reason, reduced κ e in A1 is also predi-cated and proved experimentally in the following part. Thus, a proper α (145.9 µV K −1 ) as well as σ (524.4 S cm −1 ) is obtained in A1 with an optimal PF of 11.2 µW cm −1 K −2 .…”

Section: Te Properties At Room Temperaturementioning

confidence: 54%

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Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Chen

et al. 2019

Adv Elect Materials

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κ, κ e , κ L , and T are the Seebeck coefficient, electrical conductivity, total thermal conductivity, electrical thermal conductivity, lattice thermal conductivity, and absolute working temperature, respectively. [1,2] Since α, σ, and κ are strongly coupled with each other, a simple improvement in single parameter usually results in a deterioration of the others. The challenge of realizing superior TE properties lies in the improvement of ZT, that is, simultaneously increasing in power factor (PF = α 2 σ) and suppressing κ. Normally, α enhancement can be achieved by a carrier energy filtering effect, caused by band bending at the nanointerfaces between nanoparticle and TE host materials. [2-4] Meanwhile, reducing κ L by phonon scattering is an effective way to reduce κ while maintaining a high σ. Very recently, lattice strains regulated by annealing time have also been observed for remarkably decreasing κ without affecting the carrier mobility (µ). [3] Sb 2 Te 3 and its derivatives are considered to be one of the best p-type TE materials near room temperature. [5] Compared with its bulk counterparts, nanostructured Sb 2 Te 3 film provides promising possibilities for enhanced TE properties and potential applications in micro/nanoelectromechanical systems (MEMS/NEMS) TE device. [6] Experimentally, Sb 2 Te 3 has been prepared by various approaches such as physical vapor deposition (PVD), solid state reaction, and chemical synthesis method and so on. [1,7,8] The effect of substrate, annealing temperature, and thickness on PF as well as the strain-and grain size-dependent κ in Sb 2 Te 3 films was studied. [9-11] PF can be enhanced by introducing nanoscale metal/semimetals into

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Section: Resultsmentioning

confidence: 61%

Section: Te Properties At Room Temperaturementioning

confidence: 54%

Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Chen

et al. 2019

Adv Elect Materials

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“…Alternatively, impurities can improve the thermoelectric properties because of the formation of an impurity band near the Fermi level, which increase the electrical conductivity. 12,13 Li et al 14 synthesized a Bi 2 Te 3 /graphene quantum dots (GQDs) thermoelectric compound and illustrated that the GQDs enhanced the electrical conductivity with increasing temperature. Ivanov et al 13 illustrated that Tm and Lu impurity elements reduced the mobility and carrier scattering.…”

Section: Introductionmentioning

confidence: 99%

Effects of Synthesis Parameters and Thickness on Thermoelectric Properties of Bi2Te3 Fabricated Using Mechanical Alloying and Spark Plasma Sintering

Bolghanabadi

Sajjadi

Babakhani

et al. 2021

Journal of Elec Materi

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Bi 2 Te 3 compound has been shown to exhibit the highest thermoelectric figure of merit at 573 K to 673 K. Bi 2 Te 3 samples were synthesized by mechanical alloying (MA) followed by spark plasma sintering (SPS) in this work. The effects of the milling and SPS parameters as well as the specimen thickness were evaluated to obtain the best microstructural and thermoelectric properties. To synthesize Bi 2 Te 3 , Bi and Te powders were mechanically alloyed under argon atmosphere in a stainless-steel vial with a ball-to-powder weight ratio of 15:1 for different durations. The synthesized powders were then sintered using SPS at different temperatures. To characterize the Bi 2 Te 3 powders and bulk samples, x-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS) analysis were applied. Furthermore, the bandgap energy was measured by ultraviolet-visible (UV-Vis) spectroscopy. Moreover, the Seebeck voltage and electrical conductivity were determined at different temperatures. The experimental results illustrate that, by enhancing the sintering temperature from 623 K to 673 K, the maximum Seebeck coefficient was increased from 136 lV/K to 156 lV/K. To investigate the effect of thickness, specimens were sintered at the optimum temperature of 673 K with thicknesses of 1 mm, 1.5 mm, 2 mm, 3 mm, and 4 mm. The results showed that, by decreasing the thickness, the maximum Seebeck coefficient was increased from 144 lV/K to 166 lV/K while the electrical conductivity was increased from 0.35 9 10 5 S/m to 1.42 9 10 5 S/ m, resulting in an increase in the power factor from 0.76 mW/m-K 2 to 3.94 mW/m-K 2 .

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“…Как было недавно установлено [17][18][19][20][21][22][23][24][25], в качестве эффективных легирующих примесей могут быть использованы редкоземельные элементы (R = Lu, Ce, Sm, Er, La и др.). Очевидно, что помимо собственно легирования редкоземельными элементами термоэлектрические свойства легированных материалов также будут зависеть от многих других характеристик материала, таких как плотность, кристаллическая и зеренная структура, элементный состав и дефектная структура.…”

Section: Introductionunclassified

Влияние температуры спекания на термоэлектрические свойства соединения Bi-=SUB=-1.9-=/SUB=-Gd-=SUB=-0.1-=/SUB=-Te-=SUB=-3-=/SUB=-

Япрынцев¹,

Vasil’ev²,

Ivanov³

2019

Физика И Техника Полупроводников

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The regularities of the influence of the sintering temperature (750, 780, 810, and 840 K) on the elemental composition, crystal-lattice parameters, electrical resistivity, Seebeck coefficient, total thermal conductivity, and thermoelectric figure of merit of the Bi_1.9Gd_0.1Te_3 compound are investigated. It is established that the elemental composition of the samples during high-temperature sintering varies due to intense tellurium evaporation, which can lead to the formation of various point defects (vacancies and antisite defects) affecting the majority carrier (electron) concentration and mobility. The sintering temperature greatly affects the electrical resistivity of the samples, while the influence on the Seebeck coefficient and total thermal conductivity is much weaker. The largest thermoelectric figure of merit ( ZT ≈ 0.55) is observed for the sample sintered at 750 K.

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Enhancement of thermoelectric efficiency in Bi2Te3 via rare earth element doping

Cited by 52 publications

References 25 publications

Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Effects of Synthesis Parameters and Thickness on Thermoelectric Properties of Bi2Te3 Fabricated Using Mechanical Alloying and Spark Plasma Sintering

Влияние температуры спекания на термоэлектрические свойства соединения Bi-=SUB=-1.9-=/SUB=-Gd-=SUB=-0.1-=/SUB=-Te-=SUB=-3-=/SUB=-

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Enhancement of thermoelectric efficiency in Bi2Te3 via rare earth element doping

Cited by 52 publications

References 25 publications

Lattice Strain Enhances Thermoelectric Properties in Sb2Te3/Te Heterostructure

Lattice Strain Enhances Thermoelectric Properties in Sb2Te3/Te Heterostructure

Effects of Synthesis Parameters and Thickness on Thermoelectric Properties of Bi2Te3 Fabricated Using Mechanical Alloying and Spark Plasma Sintering

Влияние температуры спекания на термоэлектрические свойства соединения Bi-=SUB=-1.9-=/SUB=-Gd-=SUB=-0.1-=/SUB=-Te-=SUB=-3-=/SUB=-

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Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure