Enhancement of the Thermoelectric Performance of Polycrystalline In<sub>4</sub>Se<sub>2.5</sub> by Copper Intercalation and Bromine Substitution

Luo, Yubo; Li, Gen; Liu, Ming; Xiao, Ye; Fu, Liangwei; Li, Weixin; Zhu, Pinwen; Peng, Jiangying; Gao, Sheng; Zhang, Jiaqi

doi:10.1002/aenm.201300599

Cited by 72 publications

(55 citation statements)

References 27 publications

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“…[1][2][3][4] The conversion efficiency of a thermoelectric device is determined by the dimensionless thermoelectric figure of merit of the thermoelectric materials involved, ZT=rS 2 T/j, where r, S, j are the electrical conductivity, the Seebeck coefficient and the total thermal conductivity, respectively. [1][2][3][4] The conversion efficiency of a thermoelectric device is determined by the dimensionless thermoelectric figure of merit of the thermoelectric materials involved, ZT=rS 2 T/j, where r, S, j are the electrical conductivity, the Seebeck coefficient and the total thermal conductivity, respectively.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric performance of SnTe with ZnO carrier compensation, energy filtering, and multiscale phonon scattering

et al. 2017

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In this work, the thermoelectric properties of SnTe have been regulated synergistically by introduction of n‐type ZnO nanoinclusions. On one hand, the excessive holes in SnTe matrix were compensated properly by n‐type ZnO, and the Seebeck coefficient has been improved greatly due to the carrier energy filtering effect by a large quantity of ZnO‐SnTe hetero‐junction interface barriers; On the other hand, the thermal conductivity gets reduced by the enhanced phonon scattering from multiscale hierarchical architectures. Consequently, a maximum ZT of ~0.9 at 873K has been obtained in the 0.8 wt% sample, which enhances by 112% in comparison with the nanoinclusion‐free sample.

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Section: Introductionmentioning

confidence: 99%

Thermoelectric performance of SnTe with ZnO carrier compensation, energy filtering, and multiscale phonon scattering

et al. 2017

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“…To optimize the thermal properties, various phonon engineering approaches were used to enhance phonon scattering and decrease κ L by having taken advantage of nanoinclusion [3][4][5][6][7][8][9][10][11][12][13] . A series of band structure engineering approaches were employed to improve the electrical properties [14][15][16][17][18][19][20] . Recently, we discovered that the electrical and thermal properties of TE materials could be simultaneously optimized through coexisting multi-localization transport behavior 21 .…”

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confidence: 99%

Magnetoelectric interaction and transport behaviours in magnetic nanocomposite thermoelectric materials

et al. 2016

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How to suppress the performance deterioration of thermoelectric materials in the intrinsic excitation region remains a key challenge. The magnetic transition of permanent magnet nanoparticles from ferromagnetism to paramagnetism provides an effective approach for the solution of this challenge. Here we have designed and prepared the magnetic nanocomposite thermoelectric materials consisting of BaFe 12 O 19 nanoparticles (BaM-NPs) and Ba 0.3 In 0.3 Co 4 Sb 12 matrix. It is discovered that the electrical transport behaviors of the nanocomposites have been controlled by the magnetic transition of BaM-NPs from ferromagnetism to paramagnetism. BaM-NPs trap the elctrons below the Curie temperature (T C ) and release the trapped electrons above the T C , playing an "electron repository" role in maintaining high ZT. BaM-NPs produce two types of magnetoelectric effects of electron spiral motion and magnon-drag thermopower besides enhancing phonon scattering. Our work demonstrates that the thermoelectric performance deterioration in the intrinsic excitation region can be suppressed through the magnetic transition of permanent magnet nanoparticles.Thermoelectric (TE) materials have attracted much interest owing to the fascinating applications in recycling utilization of industrial waste heat and automobile exhaust heat, high-efficiency cooling of next-generation integrated circuits, and full-spectrum solar power generation 1,2 . The properties of TE materials are characterized by dimensionless figure of merit ZT=α 2 σT/(κ E +κ L ). Where T, α, σ, κ E and κ L are the absolute temperature, Seebeck coefficient, electrical conductivity, and the electronic and lattice components of the thermal conductivity (κ), respectively. To optimize the thermal properties, various phonon engineering approaches were used to enhance phonon scattering and decrease κ L by having taken advantage of nanoinclusion [3][4][5][6][7][8][9][10][11][12][13] . A series of band structure engineering approaches were employed to improve the electrical properties [14][15][16][17][18][19][20] . Recently, we discovered that the electrical and thermal properties of TE materials could be simultaneously optimized through coexisting multi-localization transport behavior 21 . However, TE materials have been facing a serious problem that the intrinsic excitation unavoidably results in the deterioration of high-temperature performance. Up to now, it remains a key challenge how to suppress the performance deterioration of TE materials in the intrinsic excitation region.Based on the Maxwell's electromagnetic theory, the charged particles (electrons and holes) are confined to circular paths or helixes and even trapped by magnetic impurities owing to the Lorentz force (F L ) 22 . To achieve excellent electrical transport properties, all semiconductor materials including various TE materials had been generally required to eliminate the magnetic impurities in the past decades. This understanding has limited the development of magnetic nanocomposite TE materials. Here we pr...

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“…The Hall coefficient R H (R H = ρ xy /H) and Hall resistivity ρ xy were measured by a four-probe contact method with sweeping magnetic fields from −5 T to +5 T using a physical property measurement system (PPMS, Quantum Design, USA). 10 The Hall mobilities of In 4 13 The increase in Hall mobility in bulk crystalline materials is caused by an enhancement of crystallinity, e.g. The thermal diffusivity λ and specific heat C p were measured by a laser flash method (LFA-457, NETZSCH) and physical property measurement system, respectively.…”

Section: Methodsmentioning

confidence: 99%

Thermoelectric properties and chlorine doping effect of In₄Pb_0.01Sn_0.03Se_2.9Cl_x polycrystalline compounds

Kim

et al. 2015

Dalton Trans.

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We investigated the thermoelectric properties of Cl-doped polycrystalline compounds In4Pb0.01Sn0.03Se2.9Clx (x = 0.02, 0.04, and 0.06). X-ray diffraction measurement shows a gradual change in lattice volume for x ≤ 0.04 without any impurity phases indicating a systemic change in Cl doping. The Cl doping in the compounds has the effect of increasing carrier concentration and the effective mass of carriers, resulting in an increase in power factor at a high temperature (∼700 K). Because of the increased electrical conductivity at a high temperature, the dimensionless thermoelectric figure of merit ZT reaches 1.25 at 723 K for the x = 0.04 Cl-doped compound, which is a relatively high value for n-type polycrystalline materials.

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Enhancement of the Thermoelectric Performance of Polycrystalline In₄Se_2.5 by Copper Intercalation and Bromine Substitution

Cited by 72 publications

References 27 publications

Thermoelectric performance of SnTe with ZnO carrier compensation, energy filtering, and multiscale phonon scattering

Thermoelectric performance of SnTe with ZnO carrier compensation, energy filtering, and multiscale phonon scattering

Magnetoelectric interaction and transport behaviours in magnetic nanocomposite thermoelectric materials

Thermoelectric properties and chlorine doping effect of In₄Pb_0.01Sn_0.03Se_2.9Cl_x polycrystalline compounds

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Enhancement of the Thermoelectric Performance of Polycrystalline In4Se2.5 by Copper Intercalation and Bromine Substitution

Cited by 72 publications

References 27 publications

Thermoelectric performance of SnTe with ZnO carrier compensation, energy filtering, and multiscale phonon scattering

Thermoelectric performance of SnTe with ZnO carrier compensation, energy filtering, and multiscale phonon scattering

Magnetoelectric interaction and transport behaviours in magnetic nanocomposite thermoelectric materials

Thermoelectric properties and chlorine doping effect of In4Pb0.01Sn0.03Se2.9Clx polycrystalline compounds

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Product

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Enhancement of the Thermoelectric Performance of Polycrystalline In₄Se_2.5 by Copper Intercalation and Bromine Substitution

Thermoelectric properties and chlorine doping effect of In₄Pb_0.01Sn_0.03Se_2.9Cl_x polycrystalline compounds