Enhancement of the electrical properties of Al-doped ZnO films deposited on ZnO-buffered glass substrates by using an ultrathin aluminum underlayer

THE LEVEL OF SELF-COMPENSATION OF ZnO CODOPED BY NITROGEN AND ALUMINUM

“…Концентрація електронів у зоні провідності n зв'язана з енергією рівня Фермі ∆μ співвід-ношенням [15]: (4) де ∆μ відраховується від дна зони провідності, як це показано на Рис. 6, а N с -ефективна густина станів у зоні провідності: (5) m* n -ефективна маса електронів (m* n = 0.24 m 0 [16]).…”

“…Легування елементами ІІІ групи періодичної системи (Al, Ga, In) дозволяє отримати низь-коомні прозорі плівки ZnO з концентрацією електронів > 10 20 см -3 , придатні для застосуван-ня в сонячних елементах і рідкокристалічних дисплеях [4]. Однак, при великій концентрації донорної домішки опір оксиду виявляється за-надто високим, що не корелює з концентрацією введеної домішки.…”

The Solubility and Temperature Dependence of Resistivity for Aluminum‐Doped Zinc Oxide Ceramic

“…Aluminum (Al)‐doped ZnO transparent conductive thin film is widely used in optoelectronic devices, photovoltaic devices due to its high conductivity (10 4 S/cm) and high transparency (>85%) over the visible range of light 1–4 . Many methods were used to fabricate high‐performance Al‐doped ZnO films, 5–9 among them, magnetron sputtering (MS) is the most important and common method for a large area homogeneous film deposition 5,10,11 . For the case of an MS deposition, the properties of film are largely related to the properties of the sputtering target.…”

“…[1][2][3][4] Many methods were used to fabricate high-performance Al-doped ZnO films, [5][6][7][8][9] among them, magnetron sputtering (MS) is the most important and common method for a large area homogeneous film deposition. 5,10,11 For the case of an MS deposition, the properties of film are largely related to the properties of the sputtering target. Accordingly, the preparation of Al-doped ZnO ceramic sputtering target has been intensively and extensively studied, along with its density, structural, and electrical properties.…”

Influence of the aluminum and indium concentrations on the electrical resistivity and transmittance properties of InAlZnO thin films

“…However, significant efforts have been made for decades to develop new TC materials which can replace ITO and IZO for last two decades. As results of these efforts, metal-doped oxides such as Al-doped ZnO (AZO), 1)-3) Ga-doped ZnO (GZO) 4)-6) and Fdoped tin oxide (FTO) 7)-9) as well as multilayer TC oxides (TCOs) consisting of oxide/metal/oxide such as ZnO/Ag/ZnO, 10) ITO/Ag/ITO, 11) ITO/CuAg/ITO, 12) AZO/Al/ZnO 13) have been developed as substitutes for ITO and IZO. There have been also many reports in quarternery TCOs such as InGaZnO 14) in recent years.…”