Enhancement of the efficiency of ultra-thin CIGS/Si structure for solar cell applications

Boubakeur, Manel; Aissat, A.; Arbia, Marwa Ben; Maâref, H.; Vilcot, Jean-Pierre

doi:10.1016/j.spmi.2019.106377

Cited by 41 publications

(14 citation statements)

References 34 publications

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“…Furthermore, for cell F, a high R sh value is observed (see Figure S4a), in comparison with the lowest R sh value observed for Cell A. This strong non‐resilient effect of Cell A could stem from the increased Ga concentration incorporated in the absorber that leads to an increased density of defects at the front side of the absorber, 13,14 through which photogenerated carriers could recombine. This picture is corroborated by a rather strong J 0 increment at low illumination intensities (Figure S4b).…”

Section: Resultsmentioning

confidence: 91%

Identifying dominant recombination locations in double‐graded Cu(In_1‐xGa_x)(Se_1‐yS_y)₂ solar cells and their impact on the performance at different light intensities

Ahmed

Elshabasi

Gonzalez

et al. 2022

Progress in Photovoltaics

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In this work, the impact of different Cu(In1‐xGax)(Se1‐ySy)2 solar cell structures on the shift of the dominant recombination region at varying light intensities was investigated. A new parameter was proposed to account for the dominant recombination region relative to the minimum band gap location in a graded absorber. Additionally, the influence of shunt resistances on the dominant recombination location for different CIGSSe solar cell structures was modeled. Within the investigated illumination range, correlations between the dominant recombination location and solar cell parameters as well as their temperature dependence were discussed.

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Section: Resultsmentioning

confidence: 91%

Identifying dominant recombination locations in double‐graded Cu(In_1‐xGa_x)(Se_1‐yS_y)₂ solar cells and their impact on the performance at different light intensities

Ahmed

Elshabasi

Gonzalez

et al. 2022

Progress in Photovoltaics

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“…Boubakeur et al have achieved power conversion efficiency of 21.08%. [139] Much less expensive if compared to silicon based solar cells.…”

Section: Complex Structuresmentioning

confidence: 99%

Recent Developments on the Properties of Chalcogenide Thin Films

Soonmin¹,

Paulraj²,

Kumar³

et al. 2022

Chalcogenides - Preparation and Applications

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Chalcogenide thin films have attracted a great deal of attention for decades because of their unique properties. The recent developments on thin film-based supercapacitor applications were reported. As a result of sustained efforts, the experimental findings revealed remarkable properties with enhanced fabrication methods. The properties of perovskite solar cells were discussed in terms of crystal structure and phase transition, electronic structure, optical properties, and electrical properties. Perovskite solar cell has gained attention due to its high absorption coefficient with a sharp absorption edge, high photoluminescence quantum yield, long charge carrier diffusion lengths, large mobility, high defect tolerance, and low surface recombination velocity. The thin film-based gas sensors are used for equally the identification and quantification of gases, and hence should be both selective and sensitive to a required target gas in a mixture of gases. Metal chalcogenide materials are considered excellent absorber materials in photovoltaic cell applications. These materials exhibited excellent absorption coefficient and suitable band gap value to absorb the maximum number of photons from sun radiation. The photovoltaic parameters were strongly dependent on various experimental conditions.

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“…However, only 3.75% of efficiency and 28.50% of fill factor are achieved within this structural optimization [9]. Direct growth of CIGS on Si has been proved to be very difficult because the lattice mismatch between CIGS and Si will result in generation of defects and dislocations [10]. Dislocations results in a degraded material quality which can be deleterious for manufacturing optical semiconductor devices.…”

Section: Introductionmentioning

confidence: 98%

Physical studies of CuIn1-xGaxSe2/Si1-yGey

Meltis

2023

ETN

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The importance of combining the Copper Indium Gallium Selenide (CIGS) and Silicon (Si) for solar cell technologies outruns the limitations for their commercialization and the conversion efficiency limits. The lattice mismatch (about 5%) between chalcopyrite quaternary (CIGS) and silicon (Si) regions induces strain, affecting the electronic properties of the CIGS/Si hetero-junction solar cell, an innovative view suggests inserting a silicon germanium (Si1-yGey) layer into CIGS/Si interface to reduce the lattice mismatch effects. The impact of varying gallium and germanium concentrations (xGa and yGe) on the lattice mismatch, critical thickness and absorption coefficient of CIGS/SiGe based solar cells is investigated. As well as their effects on the main parameters used to characterize the performance of solar cells such as external quantum efficiency, open circuit voltage, short current density, fill factor and the conversion efficiency. Good agreement between simulation results and both existing theoretical and experimental literature data proves adequacy of the physical properties used in this numerical investigation. Optimizing Gallium and Germanium concentrations makes it possible to achieve an efficiency of 24% due to the lattice compensation effect in Si1-yGey layers.

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Enhancement of the efficiency of ultra-thin CIGS/Si structure for solar cell applications

Cited by 41 publications

References 34 publications

Identifying dominant recombination locations in double‐graded Cu(In_1‐xGa_x)(Se_1‐yS_y)₂ solar cells and their impact on the performance at different light intensities

Identifying dominant recombination locations in double‐graded Cu(In_1‐xGa_x)(Se_1‐yS_y)₂ solar cells and their impact on the performance at different light intensities

Recent Developments on the Properties of Chalcogenide Thin Films

Physical studies of CuIn1-xGaxSe2/Si1-yGey

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Enhancement of the efficiency of ultra-thin CIGS/Si structure for solar cell applications

Cited by 41 publications

References 34 publications

Identifying dominant recombination locations in double‐graded Cu(In1‐xGax)(Se1‐ySy)2 solar cells and their impact on the performance at different light intensities

Identifying dominant recombination locations in double‐graded Cu(In1‐xGax)(Se1‐ySy)2 solar cells and their impact on the performance at different light intensities

Recent Developments on the Properties of Chalcogenide Thin Films

Physical studies of CuIn1-xGaxSe2/Si1-yGey

Contact Info

Product

Resources

About

Identifying dominant recombination locations in double‐graded Cu(In_1‐xGa_x)(Se_1‐yS_y)₂ solar cells and their impact on the performance at different light intensities

Identifying dominant recombination locations in double‐graded Cu(In_1‐xGa_x)(Se_1‐yS_y)₂ solar cells and their impact on the performance at different light intensities