Enhancement of the adhesion energy between monolayer graphene and SiO2 by thermal annealing

Megra, Yonas Tsegaye; Lim, Soomook; Lim, TaeGyeong; Na, Seung Ryul; Suk, Ji Won

doi:10.1016/j.apsusc.2021.151243

Cited by 5 publications

(6 citation statements)

References 43 publications

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“…Anneals up to 1000 °C were additionally executed to investigate possible effects above this regime. The button shear test showed that annealing up to 300 °C – 400 °C significantly increases the adhesion, in line with recent results for graphene 9 , 38 . Higher temperatures have only a minor additional influence on the adhesion, which may also lie within the standard deviation of the single measurements (Fig.…”

Section: Resultssupporting

confidence: 89%

“…Thermal annealing is an established post-process treatment to reduce polymer residues 79 , 80 , remove interfacial water residues 81 , and increase the adhesion 9 , 37 . Thermal annealing is also expected to lead to a more conformal contact of 2D materials with the respective substrates 9 , 82 and to a larger effective interaction area of the van der Waals forces. We performed button shear tests with hBN on plasma-treated thermal SiO 2 samples before and after thermal annealing in N 2 atmosphere.…”

Section: Resultsmentioning

confidence: 99%

“…Adhesion ultimately affects the device reliability, but also 2D layer transfer methods 6 , 7 . Although there are approaches to generally improve adhesion 8 , 9 , a quantitative and reliable method for measuring and evaluating the adhesion of 2D materials is lacking. Existing methodologies for measuring absolute adhesion energy values like blister tests 10 – 16 , nanoparticles 17 – 19 , and atomic force microscopy (AFM) 20 – 26 are predominantly rather time-consuming.…”

Section: Introductionmentioning

confidence: 99%

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Button shear testing for adhesion measurements of 2D materials

Schätz,

Nayi,

Weber

et al. 2024

Nat Commun

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Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene, hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on silicon dioxide and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying the adhesion of 2D materials.

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Section: Resultssupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Button shear testing for adhesion measurements of 2D materials

Schätz,

Nayi,

Weber

et al. 2024

Nat Commun

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“…Regarding the observed increased adhesion, we suspect a combination of different effects. On the one hand, the increased temperature in the etching process may lead to stronger adhesion similar to vacuum annealing. , On the other hand, RIE causes edge functionalization of the 2D materials and chemical modification of the substrate by the ionized gases. − The latter can lead to higher adhesion at the etch boundaries …”

mentioning

confidence: 99%

CVD Bilayer Graphene Spin Valves with 26 μm Spin Diffusion Length at Room Temperature

et al. 2022

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We present inverted spin-valve devices fabricated from chemical vapor deposition (CVD)-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the-art bilayer graphene spin valves. This is made possible by a polydimethylsiloxane droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate dependent Hanle measurements reveal spin lifetimes of up to 5.8 ns and a spin diffusion length of up to 26 μm at room temperature combined with a charge carrier mobility of about 24 000 cm 2 (V s) −1 for the best device. Our results demonstrate that CVD-grown BLG shows equally good room temperature spin transport properties as both CVD-grown single-layer graphene and even exfoliated single-layer graphene.

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“…Megra et al increased the adhesion energy of graphene on SiO 2 via thermal annealing. 14) Thermo-electrostatic forces have also been applied to conformably attach graphene to substrates. 15) Surface treatments of the underlying substrates are also a common approach for enhancing the adhesion energy.…”

mentioning

confidence: 99%

Robust graphene field-effect transistor biosensors via hydrophobization of SiO₂ substrates

Ushiba¹,

Nakano²,

Miyakawa³

et al. 2022

Appl. Phys. Express

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The interfacial adhesion energy between graphene and underlying substrates is considerably important for robust graphene biosensors because water molecules can intercalate underneath graphene when submerged, possibly detaching graphene from substrates. This study investigated the robustness of graphene field-effect transistor arrays fabricated on hydrophobic and hydrophilic SiO2 substrates. Although the graphene sheets delaminated from hydrophilic substrates within minutes of submersion in a buffer solution, they remained stable on hydrophobic substrates for several days. This result agreed with the estimated thermodynamic work of adhesion in water, which improved significantly from -17.3 to 17.7 mJ/m2 through the hydrophobization process of the substrates.

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Enhancement of the adhesion energy between monolayer graphene and SiO2 by thermal annealing

Cited by 5 publications

References 43 publications

Button shear testing for adhesion measurements of 2D materials

Button shear testing for adhesion measurements of 2D materials

CVD Bilayer Graphene Spin Valves with 26 μm Spin Diffusion Length at Room Temperature

Robust graphene field-effect transistor biosensors via hydrophobization of SiO₂ substrates

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Enhancement of the adhesion energy between monolayer graphene and SiO2 by thermal annealing

Cited by 5 publications

References 43 publications

Button shear testing for adhesion measurements of 2D materials

Button shear testing for adhesion measurements of 2D materials

CVD Bilayer Graphene Spin Valves with 26 μm Spin Diffusion Length at Room Temperature

Robust graphene field-effect transistor biosensors via hydrophobization of SiO2 substrates

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Product

Resources

About

Robust graphene field-effect transistor biosensors via hydrophobization of SiO₂ substrates