“…An appropriate way to accommodate the different lattice parameters of the substrate and metallic film is the use of seed layers; they are deposited onto the substrate prior to the growth of the metal film. Seeded epitaxy has been known to be a useful method to improve thin film growth in molecular beam epitaxy (MBE) deposition [1][2][3][4][5][6][7] and sputter deposition [8][9][10]. The key advantage of seeded epitaxy is that one can stabilize multiple crystal structures or orientations of a given element by using a single crystal substrate by changing the initial buffer layer.…”