Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide

Kuramoto, Masaru; Kobayashi, Seiichiro; Akagi, Takanobu; Tazawa, Kenji; Tanaka, Kazufumi; Saito, Tatsuma; Takeuchi, Tetsuya

doi:10.1063/1.5020229

Cited by 58 publications

(55 citation statements)

References 17 publications

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“…Since 2017, Stanley Corporation, in collaboration with Meijo University, has further advanced the performance of AlInN-based GaN VCSELs with record high optical power and slope efficiencies [80]. The current trend in AlInN/GaN-based VCSEL structure appears to shift toward longer cavity and non-conductive DBRs [81] toward manufacturing of high-power VCSEL devices for lighting applications. Large-scale commercial manufacturability of VCSEL devices involving AlInN DBRs should become clear in the next few years.…”

Section: Alinn/gan Dbrsmentioning

confidence: 99%

“…Immediately after the demonstration, they developed VCSELs with conductive AlInN/GaN DBRs with back-side contact, showing the feasibility of GaN-based VCSELs with vertical current injections through conducting DBRs [78]. Since 2017, Stanley Corporation, in collaboration with Meijo University, has further advanced the performance of AlInN-based GaN VCSELs with record high optical power and slope efficiencies [81]. The current trend in AlInN/GaN-based VCSEL structure appears to shift toward longer cavity and non-conductive DBRs [79] toward manufacturing of high-power VCSEL devices for lighting applications.…”

Section: Dielectric Dbrs Through Substrate Removalmentioning

confidence: 99%

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Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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A distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor microcavities and vertical cavity surface emitting lasers (VCSELs). The success in epitaxial GaAs DBR mirrors paved the way for the ubiquitous deployment of III-V VCSELs in communication and mobile applications. However, a similar development of GaN-based blue VCSELs has been hindered by challenges in preparing DBRs that are mass producible. In this article, we provide a review of the history and current status of forming DBRs for GaN VCSELs. In general, the preparation of DBRs requires an optimization of epitaxy/fabrication processes, together with trading off parameters in optical, electrical, and thermal properties. The effort of epitaxial DBRs commenced in the 1990s and has evolved from using AlGaN, AlN, to using lattice-matched AlInN with GaN for DBRs. In parallel, dielectric DBRs have been studied since 2000 and have gone through a few design variations including epitaxial lateral overgrowth (ELO) and vertical external cavity surface emitting lasers (VECSEL). A recent trend is the use of selective etching to incorporate airgap or nanoporous GaN as low-index media in an epitaxial GaN DBR structure. The nanoporous GaN DBR represents an offshoot from the traditional epitaxial approach and may provide the needed flexibility in forming manufacturable GaN VCSELs. The trade-offs and limitations of each approach are also presented.

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Section: Alinn/gan Dbrsmentioning

confidence: 99%

Section: Dielectric Dbrs Through Substrate Removalmentioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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“…Relative to the 5λ-cavity analogue, a much higher rollover operating current was obtained (20 vs. 29 mA at 20 • C). This result can likely be ascribed to a lowering of the thermal resistance, together with a higher slope efficiency stemming from the reduced front mirror reflectivity [20].…”

Section: High-power and Narrow Divergent Beam Performance Using A Lonmentioning

confidence: 99%

High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors

et al. 2019

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High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity surface-emitting lasers (VCSELs) with AlInN/GaN distributed Bragg reflectors. The high-efficiency performance was achieved by introducing a novel SiO2-buried lateral index guide and adjusting the front mirror reflectivity. Lateral optical confinement has been shown to greatly lower the otherwise significant loss of transverse radiation exhibited by typical VCSELs based on GaN. Employing a long (10λ) cavity can also enhance the output power, by lowering the thermal resistance of the VCSEL and increasing the operating current associated with thermal rollover. This modification, in conjunction with optimized front mirror reflectivity and a buried SiO2 lateral index guide, results in a blue VCSEL (in the continuous wave mode with an 8 μm aperture at 20 °C) having a superior differential quantum efficiency value of 31% and an enhanced 15.7 mW output power. This unit also exhibits a relatively high output power of 2.7 mW at temperatures as high as 110 °C. Finally, a 5.5 μm aperture VCSEL was found to generate a narrow divergence (5.1°) single-lobe far field pattern when operating at an output power of approximately 5 mW.

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“…However, these approaches may damage the wafer and has a high cost. Kuramoto et al [19]. introduced a SiO 2 -buried structure in GaN-based VCSEL with hybrid epitaxial/dielectric distributed Bragg reflector (DBR).…”

Section: Introductionmentioning

confidence: 99%

Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

Mei

et al. 2020

IEEE Photonics J.

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Two types of GaN vertical-cavity surface-emitting lasers (VCSELs), with and without lateral optical confinement (LOC) structure, were fabricated and their performances were compared. Compared with the VCSEL without LOC, the device with LOC showed a great improvement in threshold current, slope efficiency, output power and differential quantum efficiency, which was mainly due to the reduction of internal loss. Devices with LOC showed clear and multi-transversal mode structures. However, thermal dissipation became worse. The effects of such a design on thermal resistance and transverse modes were discussed.

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Enhancement of slope efficiency and output power in GaN-based vertical-cavity surface-emitting lasers with a SiO2-buried lateral index guide

Cited by 58 publications

References 17 publications

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors

Effects of Lateral Optical Confinement In GaN VCSELs With Double Dielectric DBRs

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