Enhancement of Sensitivity on Miniaturized Thin-film Magnetoimpedance with Ellipsoidal Element

Kikuchi, Hiroaki; Oe, Suguru; Uetake, Hiroaki; Yabukami, S.; Nakai, Tomoo; Hashi, S.; Ishiyama, K.

doi:10.1016/j.phpro.2015.12.141

Cited by 6 publications

(11 citation statements)

References 18 publications

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“…Lift-off requires an inwards profile in the patterned resist in order to produce well-defined, sharp edges, as illustrated in Photolithography can be used to pattern MI samples in any desired shape. Although rectangles are most usual, meanders [37,44] or ellipsoids [45] are also reported. Several photolithography steps can be performed sequentially to add pads for electric contacts, produce more complicated systems as closed-flux structures, or to integrate the sample in a functional device with the conditioning electronics.…”

Section: Fabrication Of MI Structuresmentioning

confidence: 99%

“…Several photolithography steps can be performed sequentially to add pads for electric contacts, produce more complicated systems as closed-flux structures, or to integrate the sample in a functional device with the conditioning electronics. For example, successive photolithography steps are done to integrate a MI sample into a coplanar transmission line [45,46].…”

Section: Fabrication Of MI Structuresmentioning

confidence: 99%

“…While maximum miniaturization is beneficial for the development of MI-based microsensors, downsizing has large influence on the magnetic properties and general MI performance. For instance, the shape anisotropy in elongated samples competes with the transverse anisotropy induced during the preparation, modulating the sensitivity of the sample [49], and producing an inhomogeneous behavior over the sample that can be compensated by shaping the sample in the form of ellipsoids [45] or limiting the usable region of the device [50]. Reducing the lateral size increases the flux leakage in open-flux sandwiched structures [51].…”

Section: Fabrication Of MI Structuresmentioning

confidence: 99%

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Thin-Film Magneto-Impedance Sensors

Garcı́a-Arribas¹,

Férnández²,

Cos³

2017

Magnetic Sensors - Development Trends and Applications

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We review the state-of-the-art of thin films displaying the magneto-impedance (MI) effect, with focus on the aspects that are relevant to the successful design and operation of thin film-based magnetic sensors. After a brief introduction of the MI effect, the materials and geometries that maximize the performance, together with the measurement procedure for their characterization, are exposed. A nonexhaustive survey of applications is included, mostly with the aim of displaying the capabilities of thin film structures in the field of magnetic sensing, and the variety of topics covered by them. A special emphasis is made on some concepts that are not commonly treated in the literature, such as the influence of the measuring circuit on the magneto-impedance ratio, the geometry optimization by means of numerical simulation by finite element methods, or noise measurements on thin films. Additionally, a brief description of the patterning procedure by photolithography is included, since the major advantage of thin film sensors over other types of magneto-impedance materials as ribbons or wires is the possibility of patterning the sensible element in micrometric shapes, and most of all, their easy integration with the interface microelectronic circuitry.

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Section: Fabrication Of MI Structuresmentioning

confidence: 99%

Section: Fabrication Of MI Structuresmentioning

confidence: 99%

Section: Fabrication Of MI Structuresmentioning

confidence: 99%

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Thin-Film Magneto-Impedance Sensors

Garcı́a-Arribas¹,

Férnández²,

Cos³

2017

Magnetic Sensors - Development Trends and Applications

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“…Although thin-film MI element [7][8][9][10][11] satisfies such demands, the sensitivity for field detection deteriorates at the end/edge of an element because of the demagnetizing field. 12,13 In particular, near-field detection is important to realize a sensing with higher spatial resolution, thus solving how to avoid deterioration in the sensitivity of the sensor edge is a mandatory issue; to clarify detailed behaviors of sensitivity at the edge of the element helps us to obtain solutions. In this paper, we fabricated thin-film sensor elements in which we can evaluate the impedance of 100 µm sections at the edge part of the element, and then assessed the impedance changes of each section by applying a DC magnetic field.…”

Section: Introductionmentioning

confidence: 99%

“…Because a rectangular element is the typical shape of sensor elements, on the other hand, we have clarified ellipsoidal elements contribute to improve a uniformity of demagnetizing field. 13 We also estimated impedance profiles by taking into account effects of demagnetizing field, and discuss the obtained results on the basis of the estimation.…”

Section: Introductionmentioning

confidence: 99%

Behavior of sensitivity at edge of thin-film magnetoimpedance element

Kikuchi

Uetake

et al. 2016

AIP Advances

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Analysis of thin-film magnetoimpedance behavior in low MHz regions based on domain wall equation and bias susceptibility theory AIP Advances 7, 056617 (2017) We fabricated thin-film magnetoimpedance elements in which an impedance of each 100 µm section of element can be examined, to investigate impedance changes of each section subjected to a DC magnetic field. The field strength where the impedance peaks shows a larger value at the edge and it decreases toward the center of the element, while the sensitivity is small at the end of the elements and increases toward the center of the element. The obtained results can be explained on a basis of magnetic field simulation and simple impedance model taking into account a distribution of demagnetizing field. A uniformity of demagnetizing field is significant to obtain a higher sensitivity, and intensity of the demagnetizing field strongly affects a magnetic field strength when the impedance peaks. We also clarified an ellipsoidal shape uniform the distribution of demagnetizing field within the element, which contributes to improve the sensitivity of the MI sensor, especially near edge part. © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license

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