Enhancement of Resistive Switching Characteristics of Sol–Gel TiO<sub>
                     <i>x</i>
                  </sub> RRAM Using Ag Conductive Bridges

Hsu, Chih-Chieh; Long, Pei-Xuan; Lin, Yu-Sheng

doi:10.1109/ted.2020.3036020

Cited by 16 publications

(9 citation statements)

References 61 publications

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“…45 If oxygen vacancies are responsible for the formation of conductive filaments, the set operation should be voltage polarity independent. 18,46 In the case of the Al/STO/n + -Si memory, the conductive filaments formed by the metal ions, which were injected from the electrode, are responsible for the RS mechanism. When a positive bias is applied to the Al top electrode, Al is oxidized to Al cations, and they drift downward to the bottom electrode.…”

Section: Resultsmentioning

confidence: 99%

“…14–16 Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,17–27…”

Section: Introductionmentioning

confidence: 99%

“…[14][15][16] Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,[17][18][19][20][21][22][23][24][25][26][27] Strontium titanate (SrTiO 3 , STO) is an inorganic lead-free perovskite material, which possesses the benefits of non-toxic nature, wide bandgap, and high thermal stability. [28][29][30] Thus, it has been widely employed in solar cells, capacitors, and transistors.…”

Section: Introductionmentioning

confidence: 99%

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Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

et al. 2023

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

et al. 2023

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“…As the applied voltage bias increases, excess electrons become trapped, leading to trap-controlled SCLC. This describes the charge trapping and de-trapping, the migration of oxygen vacancies in the area of interface drives RS [39,40]. Because of ohmic conduction and SCLC, it can be inferred that the Ti/ZrO 2 /SnO 2 /ITO bilayer RRAM device operates as a filamentary-type RRAM, with the formation and rupture of oxygen vacancy filaments between TE and BE due to the migration of oxygen vacancies under the influence of an electrical field [41].…”

Section: Conduction Mechanismsmentioning

confidence: 99%

Improved resistive switching characteristics of solution processed ZrO₂/SnO₂ bilayer RRAM via oxygen vacancy differential

Choi,

Pak

2024

Semicond. Sci. Technol.

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In this study, a solution-processed bilayer structure ZrO2/SnO2 resistive switching random access memory(RRAM) is presented for the first time. The precursors of SnO2 and ZrO2 are Tin(Ⅱ) acetylacetonate (Sn(AcAc)2) and zirconium acetylacetonate (Zr(C5H7O2)4), respectively. The top electrode was deposited with Ti using an E-beam evaporator, and the bottom electrode used an ITO glass wafer. We created three devices: SnO2 single-layer, ZrO2 single-layer, and ZrO2/SnO2 bilayer devices, to compare resistive switching(RS) characteristics such as the I-V curve and endurance properties. The SnO2 and ZrO2 single-layer devices showed on/off ratios of approximately 2 and 51, respectively, along with endurance switching cycles exceeding 50 and 100 DC cycles. The bilayer device attained stable RS characteristics over 120 DC endurance switching cycles and increased on/off ratio ~2.97 x 102. Additionally, the ZrO2/SnO2 bilayer bipolar switching mechanism was explained by considering the Gibbs free energy(ΔGo) difference in the ZrO2 and SnO2 layers, where the formation and rupture of conductive filaments were caused by oxygen vacancies. The disparity in the concentration of oxygen vacancies, as indicated by the Gibbs free energy difference between ZrO2 (ΔGo = -1100 kJ/mol) and SnO2 (ΔGo = -842.91 kJ/mol) implied that ZrO2 exhibited a higher abundance of oxygen vacancies compared to SnO2, resulting in improved endurance and On/Off ratio. X-ray Photoelectron Spectroscopy (XPS) analyzed oxygen vacancies in ZrO2 and SnO2 thin films. The resistance switching characteristics were improved due to the bilayer structure, which combines a higher oxygen vacancy concentration in one layer with a lower oxygen vacancy concentration in the switching layer. This configuration reduces the escape of oxygen vacancies to the electrode during resistive switching.

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“…For the pristine Ag/CuO/n + -Si device, the CuO RS layer is free of Ag atoms (figure 7(a)). When a positive bias is applied to the TE, Ag is ionized to Ag + cations due to the applied electric field [44,45]. Subsequently, the Ag + cations are drifted toward the cathode, and they are recombined with the electrons that are supplied from the cathode, as depicted in figure 7(b).…”

Section: Rs Mechanismmentioning

confidence: 99%

Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

Hsu¹,

Zhang²,

Jhang³

et al. 2021

Semicond. Sci. Technol.

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This paper demonstrates write-once-read-many-times (WORM) behavior of an Ag/CuO/n + -Si memory device. The CuO resistive switching layer with a thickness of 9.7 nm was prepared using a sol-gel process. The device shows a low conduction current of 10 −10 A at a read voltage of 1 V. A sudden current increase is observed when the voltage increases to ∼3 V, corresponding to a resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS). After that, the device remains in the LRS. Degradation of the HRS and the LRS is not observed for 10 4 read cycles. The HRS/LRS resistance ratio is 10 6 , and the data retention time is over 10 5 s. The abrupt current increase cannot be triggered by a negative bias. The formation of Ag conductive bridges in the CuO layer is responsible for the resistance switching. Statistical analyses are performed to study the distributions of the set voltages and the resistances in the HRS and LRS. The effect of the compliance current on the operating current of the Ag/CuO/n + -Si WORM memory is also investigated. The carrier transport mechanisms are found to be dominated by Schottky emission, Ohmic, and SCLC conductions. The energy barrier is 1.066 eV, which is extracted by Schottky emission analysis.

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Enhancement of Resistive Switching Characteristics of Sol–Gel TiO_x RRAM Using Ag Conductive Bridges

Cited by 16 publications

References 61 publications

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

Improved resistive switching characteristics of solution processed ZrO₂/SnO₂ bilayer RRAM via oxygen vacancy differential

Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

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Enhancement of Resistive Switching Characteristics of Sol–Gel TiO x RRAM Using Ag Conductive Bridges

Cited by 16 publications

References 61 publications

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

Improved resistive switching characteristics of solution processed ZrO2/SnO2 bilayer RRAM via oxygen vacancy differential

Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

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Enhancement of Resistive Switching Characteristics of Sol–Gel TiO_x RRAM Using Ag Conductive Bridges

Improved resistive switching characteristics of solution processed ZrO₂/SnO₂ bilayer RRAM via oxygen vacancy differential