Enhancement of reflectivity of multilayer mirrors for soft x-ray projection lithography by temperature optimization and ion bombardment

Improved temperature stability of Mo/Si multilayers by carbide based diffusion barriers through implantation of low energy CHx+ ions

“…Two multilayers, to be used as references, were deposited without CH x + ion implantation. To smoothen the interfaces for one of these multilayers Si was etched with Kr + ions [23], while for the other sample Ne + ions were used. All other multilayers were prepared using the Ne + / CH x + etching procedure for Si, with ion energies up to 1.5 keV.…”

Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources

“…The MoN/SiN multilayer coatings used in this work have been deposited on superpolished Si substrates using e-beam evaporation of Mo atoms and magnetron sputtering of Si atoms in a UHV background of 1×10 8 mbar, with post-deposition smoothing using low energy ion treatment of the Si layers [15][16][17][18]. Nitridation of the Mo and Si layers was achieved by low energy nitrogen ion treatment during deposition [19][20][21].…”

Growth and sacrificial oxidation of transition metal nanolayers

“…Si on top Mo and capping layers were grown by e-beam physical vapor deposition (PVD) onto natively oxidized super polished Si substrates in a base pressure of 1 Â 10 À6 Pa [3]. Growth rates were 0.05 nm/s for Si, 0.04 nm/s for Mo, and 0.01 nm/s for the capping metals.…”