Enhancement of programming speed on gate-all-around poly-silicon nanowire nonvolatile memory using self-aligned NiSi Schottky barrier source/drain

Abstract

The programming characteristics of gate-all-around silicon-oxide-nitride-oxide silicon (SONOS) nonvolatile memories are presented using NiSi/poly-Si nanowires (SiNW) Schottky barrier (SB) heterojunctions. The non-uniform thermal stress distribution on SiNW channels due to joule heating affected the carrier transport behavior. Under a high drain voltage, impact ionization was found as a large lateral field enhances carrier velocity. As gate voltage (Vg) increased, the difference in the drain current within a range of various temperature conditions can be mitigated because a high gate field lowers the SB height of a NiSi source/SiNW/NiSi drain junction to ensure efficient hot-carrier generation. By applying the Fowler-Nordheim programming voltage to the SONOS nanowire memory, the SB height (Φn = 0.34 eV) could be reduced by image force; thus, hot electrons could be injected from SB source/drain electrodes into the SiN storage node. To compare both SiNW and Si nanocrystal SONOS devices, the SB SiNW SONOS device was characterized experimentally to propose a wider threshold-voltage window, exhibiting efficient programming characteristics.

Low-Resistivity Titanium Nitride Thin Films Fabricated by Atomic Layer Deposition with TiCl4 and Metal–Organic Precursors in Horizontal Vias

“…In semiconductors, TiN thin films that are conducting are utilized for several applications, including diffusion barrier liners for W, Co, and Cu, − barrier metals for high-density NAND flash memory devices, and other 3D structures (especially re-entrant undercut structures) in which a metal diffusion barrier is needed, such as 3D NAND, 3D DRAM, gate all around (GAA) channels, and Si nanowire gate stacks . TiN can also be utilized as a surface layer on carbon nanotubes in supercapacitors .…”

CMOS-compatible method for doping of buried vertical polysilicon structures by solid phase diffusion

“…Polysilicon is a versatile and simple to integrate material, which is in common use for manufacturing of complicated layers and structures in the microelectronics industry. 1 The ability to deposit polysilicon on a wide variety of substrates along with standard CMOS techniques enables manufacturing of complex 3D structures, 2,3 which offer an advantage in various applications such as thin-film transistors, 4 microelectromechanical systems (MEMS), 5 and solar cells, 6 and has recently shown great promise in silicon photonics. [7][8][9] Vertical structures have been employed in the design of semiconductor devices as a means to minimize device area.…”