2016
DOI: 10.1016/j.orgel.2016.02.003
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Enhancement of power conversion efficiency of PTB7:PCBM-based solar cells by gate bias

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Cited by 12 publications
(8 citation statements)
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“…Therefore, major photo-conduct is to the benefit of restraining charge recombination and prompting electron to extract in PSCs. Thus, it is important for improving conductivity to restrain interfacial charges recombination and enhance charges extraction, electron/hole-transporting ability [32][33]. The following discussion further confirmes that CZO acts as ETL, accounting for the theory of FF enhancement in doped system.…”
Section: Resultssupporting
confidence: 63%
See 1 more Smart Citation
“…Therefore, major photo-conduct is to the benefit of restraining charge recombination and prompting electron to extract in PSCs. Thus, it is important for improving conductivity to restrain interfacial charges recombination and enhance charges extraction, electron/hole-transporting ability [32][33]. The following discussion further confirmes that CZO acts as ETL, accounting for the theory of FF enhancement in doped system.…”
Section: Resultssupporting
confidence: 63%
“…The following discussion further confirmes that CZO acts as ETL, accounting for the theory of FF enhancement in doped system. The J-V curves of electron-only (μe ) devices along with individual Cd-doped ratios are shown in Fig (d), we elucidate the carrier mobilities of ETL by adopting the space-charge limited current (SCLC) model [33][34][35][36][37]. Electron-only devices were manufactured (ITO/CZO/PTB7-Th:…”
Section: Resultsmentioning
confidence: 99%
“…The V eff is defined as V eff = V 0 − V a , where V 0 is the voltage when J ph = 0 and V a is the applied bias voltage . At high effective voltage ( V eff ), it is assumed that the exciton dissociation efficiency and charge carrier collection efficiency are unity, implying that the saturation current density ( J sat ) is mainly determined by the maximum exciton generation rates ( G max ) . As a result, J sat = qLG max , where q is the elementary charge and L is the thickness of 175 nm of the active layers.…”
Section: Resultsmentioning
confidence: 99%
“…Here, we determined the values of the J sat at approximately 2.6 V which is presented in Figure A, and we know Equation Jsat=qGmaxL where q is the elementary charge, L is the thickness of the active layer, and G max is the maximum exciton generation rates . As a result, the value of P(E,T) at any V eff can be obtained from the plot of the normalized photocurrent density ( J ph / J sat ) with respect to V eff as showed in Figure B .…”
Section: Resultsmentioning
confidence: 99%