2017
DOI: 10.1186/s11671-016-1811-0
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Enhancement of Perovskite Solar Cells Efficiency using N-Doped TiO2 Nanorod Arrays as Electron Transfer Layer

Abstract: In this paper, N-doped TiO2 (N-TiO2) nanorod arrays were synthesized with hydrothermal method, and perovskite solar cells were fabricated using them as electron transfer layer. The solar cell performance was optimized by changing the N doping contents. The power conversion efficiency of solar cells based on N-TiO2 with the N doping content of 1% (N/Ti, atomic ratio) has been achieved 11.1%, which was 14.7% higher than that of solar cells based on un-doped TiO2. To get an insight into the improvement, some inve… Show more

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Cited by 65 publications
(15 citation statements)
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References 35 publications
(33 reference statements)
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“…Except these small differences, all the diffraction peaks are almost the same. In addition, the peaks of nitrides were not clearly observed in the patterns, probably due to the low amount of doping contents and also the homogeneous distribution of N in the sample 44,45 . The UV-Vis absorbance of the samples was investigated and Tauc plots were calculated to determine the band gap energy of the materials.…”
Section: Characterizationmentioning
confidence: 93%
“…Except these small differences, all the diffraction peaks are almost the same. In addition, the peaks of nitrides were not clearly observed in the patterns, probably due to the low amount of doping contents and also the homogeneous distribution of N in the sample 44,45 . The UV-Vis absorbance of the samples was investigated and Tauc plots were calculated to determine the band gap energy of the materials.…”
Section: Characterizationmentioning
confidence: 93%
“…Figure 5 shows the Nyquist plots of PSCs Table S1. It is known that the EIS contains two circular arcs [37]. The high-frequency component is attributed to the charge transport resistance (R ct ), and the low-frequency component is mainly related to the recombination resistance (R rec ) [38].…”
Section: Resultsmentioning
confidence: 99%
“…The numerical fitting gives the device parameters, as listed in Supplementary Table S1. It is known that the EIS contains two circular arcs [31] . The high-frequency component is attributed to the charge transport resistance (R ct ), and the low-frequency component is mainly related to the recombination resistance (R rec ) [32] .…”
Section: Resultsmentioning
confidence: 99%