Enhancement of optical properties of InAs quantum dots grown by using periodic arsine interruption

Effect of growth interruptions on TiO 2 films deposited by plasma enhanced chemical vapour deposition

“…For PECVD processes, the film morphology can be tuned by controlling the substrate temperature [13], tuning the energy of plasma species [14], or regulating plasma gas composition [15] during deposition. Moreover, the film properties can also be modified by adding growth interruptions, the effect of growth interruptions has been investigated in several processes such as molecular beam epitaxy growth [16,17], reactive magnetron sputtering [18,19], PECVD [20]. Growth interruption has been considered as an effective method to modify the texture, the grain size, the microstrain and heterostructure interface of thin film because the surface migration of adatoms can be enhanced during the interruption period [21e23].…”