Enhancement of low-temperature critical epitaxial thickness of Si(100) with ion beam sputtering

Smith, Donald L.; Chen, Chau‐Chen; Anderson, G. B.; Hagström, S. B. M.

doi:10.1063/1.108884

Cited by 25 publications

(7 citation statements)

References 13 publications

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“…Even with slightly higher deposition rates, t e values for films grown with ͗E Si ͘Ӎ18 eV are much larger by factors ranging between 5 and 10. Moreover, in disagreement with the roughening model of Smith et al, 7 the t e ͑T s ͒ curve for films grown from energetic condensing species exhibits a break at 225°C with a larger slope than that obtained for MBE films at the higher temperatures and a smaller slope at lower temperatures.…”

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confidence: 48%

“…These include the use of surfactants, 4 temperature cycling and pulsed high-energy ͑600 eV͒ Ar ϩ ion irradiation to increase nucleation densities at the onset of layer growth, 5 and adsorption of foreign species ͓e.g., oxygen on Pt͑111͔͒ to decrease step-down activation barriers. 6 Smith et al 7 reported an increase in t e as well as a steeper, but single, ln͑t e ͒ versus 1/T s slope, for Ar ϩ -ion-beam sputter-deposited Si͑001͒. They proposed that the enhancement in t e was due to the increased kinetic energy of incident Si atoms giving rise to enhanced short-range adatom ''impact'' mobilities decreasing the surface roughness.…”

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confidence: 95%

“…Filling of interisland trenches thus becomes a critical step for ensuring continuous epitaxial growth. 7 The use of energetic condensing species affects critical thicknesses through a variety of mechanisms including collisionally enhanced trench filling and changes in both average island sizes and shapes. A primary effect is inhibiting nucleation of the amorphous phase in interisland trenches through recoil and forward sputtering processes which decrease the probability of condensation on ''wrong'' sites on facet planes ͑e.g., ͱ3ϫͱ3 sites on ͕111͖͒ 2 and by minimizing atomic shadowing on the inclined facets.…”

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confidence: 99%

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Low-temperature Si(001) epitaxy using low-energy (〈E 〉≂18 eV) Si atoms

Lee

Tomasch

Greene

1994

Applied Physics Letters

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The use of energetic (average energy ≂18 eV), rather than thermal (≂0.2 eV), Si beams during deposition at R=1 Å s−1 was found to increase the Si(001) epitaxial thickness te (100 Å–1.2 μm) by up to an order of magnitude over the growth temperature range Ts=80–300 °C. The overall increase in te is attributed primarily to a more effective filling of interisland trenches which form during growth in the low adatom mobility two-dimensional multilayer mode and provide preferential sites for the nucleation of the terminal amorphous phase. In addition, the behavior of te(Ts) at constant R and te(R) at constant Ts is quite different than that reported for films grown by molecular-beam epitaxy. A decrease in the slope of ln(te) versus −1/Ts at Ts<225 °C indicates an additional increase in the epitaxial thickness at very low growth temperatures while at constant Ts, 150 °C, te increases with decreasing R, reaches a maximum, and then decreases. These latter effects are explained in terms of changes in average island sizes giving rise to corresponding changes in interlayer mass transport.

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confidence: 95%

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confidence: 99%

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Low-temperature Si(001) epitaxy using low-energy (〈E 〉≂18 eV) Si atoms

Lee

Tomasch

Greene

1994

Applied Physics Letters

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“…This result shows that epitaxy was taking place continuously, and this is more than 10 times thicker than has been reported at this temperature. 10 Figures 2a-c show 2 m thick Si films grown at 140, 107°C, and room temperature, respectively. A decrease in the stage temperature from 175 to 140°C altered the film structure to an oriented polycrystalline ͑Fig.…”

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confidence: 99%

Continuous Si Epitaxy by Direct Current Magnetron Sputtering

Huang¹,

Yeh²

2009

Electrochem. Solid-State Lett.

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Continuous Si homoepitaxy was realized without substrate heating by using dc magnetron sputtering. Si at least 10 m thick can be grown epitaxially on a Si substrate. Characterization by reflective high-energy electron diffraction, micro-Raman spectroscopy, and transmission electron microscopy showed that the epitaxial film exhibited good crystallinity. Electrons were shown to be the dominant species for surface bombardment in dc magnetron sputtering. It was suggested that energetic electron bombardment plays an important role in low-temperature and continuous-sputtering epitaxy.Si epitaxy is important for giant-area electronic devices, such as Si solar cells or function-integrated thin-film transistor driven flatpanel displays. For such applications, an epitaxy method that provides large-area application, low-temperature growth, and low cost is important. Especially in the case of crystalline Si thin-film solar cells, because the Si film thickness should be larger than several micrometers due to its low absorption coefficient, continuous epitaxial growth with rapid growth rates is required. Epitaxy by sputtering deposition 1-8 or by hot-wire chemical vapor deposition 9 at approximately 200°C has been reported, and these methods have been considered favorites for fabricating giant microelectronic devices because of their ability to coat large areas as well as their low cost and low operating temperature. However, continuous Si epitaxy with a sufficient growth rate has not previously been reported. In this paper, we report a method for continuous Si epitaxy that uses dc magnetron sputtering deposition.This section describes the experimental procedures used. In this study, a self-built 3 in. dc magnetron sputtering apparatus was used. The chamber was evacuated by a turbo molecular pump that was connected to a rotary pump. The base pressure was 5 ϫ 10 −7 Torr. A single-crystal n-type Si wafer with a resistivity of ϳ5 ϫ 10 3 ⍀ cm was used as the target. Its thickness was 3 mm, which caused a resistance of 34 ⍀ between the front and back sides of the target. For a common discharge current of 0.2 A in this study, a potential difference of 6.8 V between the two sides of the target is sufficient to pass this amount of current. The current may be concentrated in the circular-shaped region on the target in magnetron sputtering, and therefore, a larger potential difference may be needed. However, increased target temperature at that region also results in a reduced resistivity. In the actual situation, discharge was stable during common film deposition in this study. The 3 in. substrate stage, which was 40 mm beneath the target, was grounded as an anode electrode. The temperatures at the top and bottom surfaces of the substrate stage were measured using a thermocouple prior to sputtering, which revealed that the temperature of the top surface of the stage was 30% lower than that of the bottom surface. During sputtering, only the temperature at the bottom surface of the stage ͑which was shielded from the plasma͒ was monitored...

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“…Data from MBE Si͑001͒ layers 22 grown at Rϭ0.07 nm s Ϫ1 are also shown for comparison. Even with slightly higher growth rates, t e values for undoped Si films grown with ͗E Si ͘Ӎ18 eV are much larger than those of the MBE layers by factors ranging between 5 and 10 over the growth temperature range from T s ϭ80°C, where t e ϭ10 nm, to T s ϭ300°C with t e ϭ1.2 m. Moreover, in disagreement with the roughening model of Smith et al, 46 the t e (T s ) curve for films grown from energetic condensing species exhibits a break at 225°C with a larger slope than that obtained for MBE films at the higher temperatures and a smaller slope at lower temperatures.…”

Section: Epitaxial Ibsd Si(001) Layers Grown At Very Low Temperatumentioning

confidence: 66%

Epitaxial Si(001) grown at 80–750 °C by ion-beam sputter deposition: Crystal growth, doping, and electronic properties

Lee

Xue

Greene

1996

Journal of Applied Physics

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Epitaxial undoped and Sb-doped Si films have been grown on Si(001) substrates at temperatures Ts between 80 and 750 °C by ultrahigh-vacuum Kr+-ion-beam sputter deposition (IBSD). Critical epitaxial thicknesses te in undoped films were found to range from 8 nm at Ts=80 °C to ≳1.2 μm at Ts≥300 °C, while Sb incorporation probabilities σSb varied from unity at Ts≲550 °C to ≂0.1 at 750 °C. These te and σSb values are approximately one and one to three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Temperature-dependent transport measurements carried out on 1-μm-thick Sb-doped IBSD layers grown at Ts≥350 °C showed that Sb was incorporated into substitutional sites with complete electrical activity and that electron mobilities in films grown at Ts≥400 °C were equal to the best reported results for bulk Si.

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Enhancement of low-temperature critical epitaxial thickness of Si(100) with ion beam sputtering

Cited by 25 publications

References 13 publications

Low-temperature Si(001) epitaxy using low-energy (〈E 〉≂18 eV) Si atoms

Low-temperature Si(001) epitaxy using low-energy (〈E 〉≂18 eV) Si atoms

Continuous Si Epitaxy by Direct Current Magnetron Sputtering

Epitaxial Si(001) grown at 80–750 °C by ion-beam sputter deposition: Crystal growth, doping, and electronic properties

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