Enhancement of hole injection using ozone treated Ag nanodots dispersed on indium tin oxide anode for organic light emitting diodes

Moon, Jong‐Min; Bae, Jung-Hyeok; Jeong, Jin-A; Jeong, Soon-Wook; Park, No-Jin; Kim, Han−Ki; Kang, Jae‐Wook; Kim, Jang‐Joo; Yi, Min-Su

doi:10.1063/1.2719153

Cited by 42 publications

(21 citation statements)

References 18 publications

(14 reference statements)

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“…The fairly strong C 1s peak corresponded to the existence of organic contamination on the ITO anode. The results are similar to the reported ones [24]. By comparing the ITO/V 2 O 5 case in Fig.…”

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confidence: 80%

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Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Zhang

Choy²

2008

IEEE Trans. Electron Devices

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CONVENTIONAL bottom emitting organic light-emitting devices (OLEDs) commonly use conductive indium tin oxide (ITO) as anode because of its high conductivity, transparency, and work function. However, the surface of ITO glass is chemically and physically ill defined, which will degrade the performance as the hole-injecting electrode in OLEDs. Over the past years, many methods were used to treat the surface of ITO [1]- [5], such as ultraviolet-ozone cleaning and oxygen plasma exposure, in order to enhance hole injection [1], [2]. These treatments were effective in removing residual surface contaminants and increasing oxygen content at ITO surface, resulting in the increase of work function to minimize interfacial charge injection barriers.Moreover, the incorporation of injection enhancing interlayer at electrode-organic interfaces has been used as one alternative route to control carrier injection [6] In this brief, we use V 2 O 5 coating on transparent thin Au film as a composite hole-injection layer on ITO anode for bottom emitting OLEDs. The characteristics of bottom emitting OLEDs with the composite anodes of ITO-Au-V 2 O 5 are described. A thin oxide layer V 2 O 5 is used to modify the surface of Au for enhancing the hole injection from Au by the increase of work function to 5.3 eV and thus sequentially improves emission efficiency. The effects of V 2 O 5 layer on the enhancement of electrical properties of the bottom emitting OLEDs are discussed. Ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS, respectively) analysis indicate that the higher work function of ITO/Au/V 2 O 5 (5.3 eV) than ITO/Au (5.0 eV) anode is due to Au surface band bending. Thus, the barrier for hole injection from ITO through Au/V 2 O 5 to the hole transport layer (HTL) is decreased. Our results show that the performance of OLEDs with V 2 O 5 layer is greatly improved compared with the case of only Au layer on the ITO. Interestingly, it is also better than the ITO anode modified by V 2 O 5 device.All devices were fabricated on ITO coated glass with a sheet resistance of 10 Ω/ , and thermally deposited LiF/Al was used as cathode. ITO substrate was cleaned and treated by O 2 plasma. The deposition was carried out at a pressure of less than 3 × 10 −4 Pa without any vacuum break. The organics and metal oxide were evaporated at the rate in a range of 0.3-0.4 nm/s. The Au metals were evaporated at the rate of ∼0.1 nm/s prior to the oxide and organic layer deposition. Al metal was evaporated at the rate of 0.3∼0.5 nm/s. The devices have an emissive area of 3.57 mm

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confidence: 80%

“…Using metal oxides with high work function, such as AgO x [8] and NiO x [9], as an interfacial layer between ITO and organic material has [11]. It has also been used as an efficient modification layer of ITO and (p-Si) anode to enhance hole injection [12], [13].…”

mentioning

confidence: 99%

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Zhang

Choy²

2008

IEEE Trans. Electron Devices

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“…Recently there has been considerable interest in the structural and electrical properties of ITO contact layers [4][5][6]. In this research, band structure characteristics of ITO layers are very important for analysing the contact potential of ITO electrodes and functional layers in devices [7,8].…”

Section: Introductionmentioning

confidence: 99%

Nitrile Hydration by Co(III) Complex with Oxygenated S Atoms Inserted into Mesoporous Silica

Ozawa

Shibayama

Yano

et al. 2011

Jpn. J. Appl. Phys.

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Amorphous indium tin oxide films were grown on a polyethylene terephthalate substrate by RF-magnetron sputtering. The energy band, which contained not only the width of the optical band but also detailed information about the Fermi level (E f ) and mobility edge (E c ), was calculated according to the theory of amorphous semiconductors with the experimental parameters of transmittance and electrical conductivity. Furthermore, the calculated energy band can be used to effectively explain both the variation of electrical conductivity and the weak absorption at the wavelength range of 750-800 nm in our experiment. An indirect transition was also clearly observed in our samples during the calculation of the optical energy band.

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“…One method is to use various metal layers; Kim et al, reported that ozone-treated silver film on an ITO anode can enhance device performance [12]. Silver is frequently used as the electrode material in OLEDs [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Mechanism of droplet generation in silver thin films for organic light-emitting diode displays

Li¹,

Roh²,

Lim³

et al. 2009

Thin Solid Films

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Enhancement of hole injection using ozone treated Ag nanodots dispersed on indium tin oxide anode for organic light emitting diodes

Cited by 42 publications

References 18 publications

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Indium Tin Oxide Modified by Au and Vanadium Pentoxide as an Efficient Anode for Organic Light-Emitting Devices

Nitrile Hydration by Co(III) Complex with Oxygenated S Atoms Inserted into Mesoporous Silica

Mechanism of droplet generation in silver thin films for organic light-emitting diode displays

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