Enhancement of Exchange Bias in the ${\rm Co}_{2}{\rm FeSi/IrMn}$ System

Aley, N. P.; Takayama, S.; Hirohata, Atsufumi; O'Grady, K.

doi:10.1109/tmag.2011.2151838

Cited by 7 publications

(7 citation statements)

References 10 publications

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“…The volume of the sample was calculated by multiplying length by width to obtain the area, and then multiplying the area by the thickness. M s of CFS films grown on the MgO(001) substrate was found to be (960±96) emu/cm 3 , which is similar to the previously reported value of ~ 860 emu/cm 3 [68]. These values were ~ 70% of the CFS bulk value [68].…”

Section: Film Characterisationsupporting

confidence: 88%

“…M s of CFS films grown on the MgO(001) substrate was found to be (960±96) emu/cm 3 , which is similar to the previously reported value of ~ 860 emu/cm 3 [68]. These values were ~ 70% of the CFS bulk value [68]. It could also be expressed in μ B /f.u.…”

Section: Film Characterisationsupporting

confidence: 88%

“…This also agrees with the increase in M s measured. After 4.5 hours annealing, M S is measured to be ~ 760 emu/cm 3 , which is ~ 62% of the theoretically predicted value [68] and is similar to the previously reported value on a polycrystalline CFS film ~ 800 emu/cm 3 ) [137]. The annealing for 6 h induces the Si segregation as reported [137], reducing M s significantly (~ 460 emu/cm 3 ).…”

Section: Co 2 Fesi/mgo(001)supporting

confidence: 87%

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New Bandgap Measurement Technique for a Half-Metallic Ferromagnet

et al. 2014

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Spintronics is a new and emerging field in nanotechnology, which has been evolving rapidly. It aims to exploit the spin degree of freedom in order to realise advanced electronic devices. With the recent improvement in the storage media devices following to the discovery of giant magnetoresistance effect, it is envisioned that the electronic devices have several advantages over the conventional electronics in respect to the storage capacity, speed and power consumption. One avenue towards next generation spintronic devices is to develop half-metallic ferromagnets (HMFs) with 100% spin polarisation (P) and Curie temperature (T C ) above room temperature (RT). HMFs have unique properties, in which the majority spins have a metallic band structure, whereas the minority spins have a semiconducting band with the Fermi level (E F ) lying within an energy gap. P of HMFs has been predominantly estimated using Julliere's formula in a magnetic tunnel junction (MTJ) or measured by the Andreev reflection (AR) at low temperature. Both methods are very sensitive to the surface/interface spin polarisation.Alternative optical methods such as photoemission have also been employed. However, these methods require a complicated and expensive set-up. Therefore, it is of paramount importance to directly and easily measure the band-gap of HMFs.The main aim of this study is to develop a new technique to directly measure the band-gap (E g ) of HMFs at RT. For that, a simple experimental set-up has been designed This technique allows measuring E g of HMFs at RT for the first time. It can therefore be used to provide simple optimisation of growth conditions.iii

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Section: Film Characterisationsupporting

confidence: 88%

Section: Film Characterisationsupporting

confidence: 88%

Section: Co 2 Fesi/mgo(001)supporting

confidence: 87%

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New Bandgap Measurement Technique for a Half-Metallic Ferromagnet

et al. 2014

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“…4 Therefore, it is hoped that the use of an HA in contact with an AFM as the pinned reference layer would lead to SV or MTJ with ultrahigh magnetoresistive effect amplitudes. Reports on EB in bilayers containing HA are still rare and are restricted to a few reports on HA/AFM bilayers in MTJs including Co 2 MnSi/IrMn, 10,11 Co 2 FeAl/IrMn, 12 or Co 2 FeSi/IrMn [13][14][15] bilayers. In particular, it was shown that Co 2 MnSi/Al-O/Co 2 MnSi/IrMn MTJ can exhibit a large tunnel magnetoresistance of 570% at low temperatures.…”

Section: Introductionmentioning

confidence: 99%

Exchange bias in thin Heusler alloy films in contact with antiferromagnet

Dubowik

Gościańska

Załęski

et al. 2013

Journal of Applied Physics

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Exchange bias is studied in thin film systems, in which three types of Heusler alloys (Ni 2 MnSn, Co 2 MnSn, and Co 2 FeSi) are in contact with an antiferromagnet. Magnetic exchange interactions between the constituting atoms (i.e., Ni-Mn, Mn-Mn, Co-Mn, and Co-Fe, or Co-Co) differ substantially in these Heusler alloys. We explain the influence of the exchange stiffness A within the Heusler alloys and of the exchange coupling between Heusler alloy and an antiferromagnet in a finite interface volume. Insertion of an ultrathin Co layer at interfaces brings about an enhancement of the exchange bias in Heusler alloy/antiferromagnet layer system. V

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“…EB was discovered in 1956 by Meiklejohn and Bean [5], and from then on, it has been investigated extensively in the systems with layered [6][7][8][9][10] or core/shell [11][12][13][14] structures. Especially in order to develop a spin valve, an ideal interface in the layered systems can be considered to be fully compensated or noncompensated depending on the nature of the interfacial coupling and the roughness caused by defects.…”

Section: Introductionmentioning

confidence: 99%

Relative-thickness dependence of exchange bias in bilayers and trilayers

Liu

et al. 2012

Journal of Magnetism and Magnetic Materials

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Enhancement of Exchange Bias in the ${\rm Co}_{2}{\rm FeSi/IrMn}$ System

Cited by 7 publications

References 10 publications

New Bandgap Measurement Technique for a Half-Metallic Ferromagnet

New Bandgap Measurement Technique for a Half-Metallic Ferromagnet

Exchange bias in thin Heusler alloy films in contact with antiferromagnet

Relative-thickness dependence of exchange bias in bilayers and trilayers

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