Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region
Lianjie Li,
Bao Zhu,
Xiaohan Wu
et al.
Abstract:To enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion implantation at the surface of the LDMOS drift region and by drift region dimension optimization. Technology computer-aided design (TCAD) simulations show that the optimal value of Resurf ion implantation dose 1 × 1012 cm−2 can reduce the surface electric field in the n-d… Show more
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