Enhancement of Dimension Uniformity of Wet-Etched Thick Insulator Holes in Triode Carbon Nanotube Field-Emission Display Devices

Abstract

A triode structure carbon nanotube field-emission display was fabricated using the thick-film process. The critical dimensional uniformity of wet-etched thick insulator holes was enhanced by changing the wet etching mechanism from vertical dip-etching to horizontal spray-etching. The profile of the insulator holes fabricated using the new etcher was similar to anisotropic. After optimizing the operation conditions of the new etcher, the dimensional uniformity of the insulator holes increased to 97.7%. The optimal concentration of etchant was 2.2 wt % for achieving the least side etching of the insulator holes. The carbon nanotube paste was pattern-printed into the insulator holes. The uniform size of the insulator holes implied that the carbon nanotube distribution was similarly among the insulator holes. This result showed an improved uniform field emission image over the panel from 59 to 83.85%.