Enhancement of c-Axis Oriented Aluminum Nitride Films via Low Temperature DC Sputtering

Chen, Zehui; Li, Chengying; Chen, Yueh-Han; Chu, Sheng−Yuan; Tsai, Cheng‐Che; Hong, Cheng‐Shong

doi:10.1109/jsen.2021.3077274

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…The strong texture Fe 80 Ga 20 alloy film with bcc lattice shows a high degree of anisotropy in its mechanical properties, which depends on the atomic packing density [30]. For some diffraction peaks with 2θ greater than 50 • are considered to be caused by the Si (100) substrate, while the peaks of 2θ near 33 • are attribute to the influence of AlN (100), but the existence of these peaks does not affect the subsequent analysis of the sensor [31]. The magnetic properties of the Fe 80 Ga 20 were characterized in the VSM.…”

Section: Resultsmentioning

confidence: 99%

Biaxial film bulk acoustic resonator magnetic sensor based on the Fe₈₀Ga₂₀ anisotropic ΔE effect

Yun¹,

Lin²,

Hu³

et al. 2021

J. Phys. D: Appl. Phys.

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With the increasing application of personal navigation system in consumer electronics, the demand for multi-axis magnetic sensors based on MEMS is growing. We report a biaxial MEMS DC magnetic sensor consisting of an Mo/AlN/Fe80Ga20 film bulk acoustic resonator (FBAR), with anisotropy ΔE effect-based sensing principle. Different from the previously reported one-dimensional magnetic sensor based on the ΔE effect, the anisotropic ΔE effect was used to realize in-plane and out-of-plane two-dimensional magnetic field responses on a discrete sensor, and the sensor had two readout methods: resonant frequency f and return loss S11. The magnetic sensor realized the resonant frequency f shifted by 1.03 MHz and 0.2 MHz in the 567 Oe in-plane magnetic field and 720 Oe out-of-plane magnetic field, respectively, and the S11 changes by -30.2 dB and -0.92 dB. As the applied magnetic field increases, the -3 dB bandwidth quality factor Q3dB of the S11 curve gradually increases, and its maximum values in the in-plane and out-of-plane magnetic fields are 77143 and 1828, respectively, which reduces the detection limit of the magnetic sensor. The resonant magnetic sensor has stable high linear temperature and frequency drift characteristics, and its temperature frequency coefficient is -48.7 ppm/℃.

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Section: Resultsmentioning

confidence: 99%

Biaxial film bulk acoustic resonator magnetic sensor based on the Fe₈₀Ga₂₀ anisotropic ΔE effect

Yun¹,

Lin²,

Hu³

et al. 2021

J. Phys. D: Appl. Phys.

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“…Single cantilever beam structures of piezoelectric devices are used to make energy harvesters [20][21][22]. It has the advantages of simple structure, convenience in fabrication, simple installation, and maintenance [23][24][25][26][27]. Nevertheless, the disadvantages of single cantilever piezoelectric devices are large displacements, residual stresses, and short operating life.…”

Section: Introductionmentioning

confidence: 99%

Electric-Force Conversion Performance of Si-Based LiNbO3 Devices Based on Four Cantilever Beams

Zhang,

Qiao,

Wei

et al. 2023

Micromachines

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In micron or nano smart sensing systems, piezoelectric cantilever beams are distributed as major components in microsensors, actuators, and energy harvesters. This paper investigates the performance of four cantilever beam devices with “electric-force” conversion based on the inverse piezoelectric effect of lithium niobate (LiNbO3, LN) single-crystal materials. A new compact piezoelectric smart device model is proposed, designed as a single mass block connected by four beams, where devices exhibit smaller lateral errors (0.39–0.41%). The relationship between the displacement characteristics of cantilever beams and driving voltage was researched by applying excitation signals. The results show that the device has the maximum displacement at a first-order intrinsic frequency (fosc = 11.338 kHz), while the displacement shows a good linear relationship (R2 = 0.998) with driving voltage. The square wave signals of the same amplitude have greater “electrical-force” conversion efficiency. The output displacement can reach 12 nm, which is much higher than the output displacement with sinusoidal excitation. In addition, the relative displacement deviation of devices can be maintained within ±1% under multiple cycles of electrical signal loading. The small size, high reliability, and ultra-stability of Si–LN ferroelectric single-crystal cantilever beam devices with lower vibration amplitudes are promising for nanopositioning techniques in microscopy, diagnostics, and high-precision manufacturing applications.

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Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques

Pinto

Gund

Calaza

et al. 2022

Microelectronic Engineering

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Enhancement of c-Axis Oriented Aluminum Nitride Films via Low Temperature DC Sputtering

Cited by 4 publications

References 19 publications

Biaxial film bulk acoustic resonator magnetic sensor based on the Fe₈₀Ga₂₀ anisotropic ΔE effect

Biaxial film bulk acoustic resonator magnetic sensor based on the Fe₈₀Ga₂₀ anisotropic ΔE effect

Electric-Force Conversion Performance of Si-Based LiNbO3 Devices Based on Four Cantilever Beams

Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques

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Enhancement of c-Axis Oriented Aluminum Nitride Films via Low Temperature DC Sputtering

Cited by 4 publications

References 19 publications

Biaxial film bulk acoustic resonator magnetic sensor based on the Fe80Ga20 anisotropic ΔE effect

Biaxial film bulk acoustic resonator magnetic sensor based on the Fe80Ga20 anisotropic ΔE effect

Electric-Force Conversion Performance of Si-Based LiNbO3 Devices Based on Four Cantilever Beams

Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques

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Product

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Biaxial film bulk acoustic resonator magnetic sensor based on the Fe₈₀Ga₂₀ anisotropic ΔE effect

Biaxial film bulk acoustic resonator magnetic sensor based on the Fe₈₀Ga₂₀ anisotropic ΔE effect