2021
DOI: 10.1016/j.apsusc.2021.149005
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Enhancement of bonding strength in BiTe-based thermoelectric modules by electroless nickel, electroless palladium, and immersion gold surface modification

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Cited by 18 publications
(8 citation statements)
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“…For this work, Ti (α avg = 8.6 × 10 −6 K −1 ) and Nb (α a = 7.3 × 10 −6 K −1 ) were selected to realize contacts on CrSi 2 because they showed a relatively similar thermal expansion behavior [35]. Several different contact fabrication processes were reported in the literature for thermoelectrics such as sputtering [36], electroless plating [37], or thermalspraying [38]. In the present work, the process simply consisted in placing the CrSi 2 powder between two layers of metallic powder in the same graphite die and to densifying the whole together by SPS sintering.…”
Section: Fabrication Of Ti and Nb Electric Contacts On Crsimentioning
confidence: 99%
“…For this work, Ti (α avg = 8.6 × 10 −6 K −1 ) and Nb (α a = 7.3 × 10 −6 K −1 ) were selected to realize contacts on CrSi 2 because they showed a relatively similar thermal expansion behavior [35]. Several different contact fabrication processes were reported in the literature for thermoelectrics such as sputtering [36], electroless plating [37], or thermalspraying [38]. In the present work, the process simply consisted in placing the CrSi 2 powder between two layers of metallic powder in the same graphite die and to densifying the whole together by SPS sintering.…”
Section: Fabrication Of Ti and Nb Electric Contacts On Crsimentioning
confidence: 99%
“…The results are plotted in Figure d and also listed in Table S2. It can be seen that the Ni/Bi 2 Te 3 joints prepared by plating methods have contact resistance in the range of 5–10 μΩ cm 2 with a bonding strength of ∼8 MPa. ,, The bonding strength of joints prepared by spark plasma sintering (SPS) method could reach 10–20 MPa, but the contact resistance for the n-type joint is too high (210 μΩ cm 2 ). , Moreover, the SPS process is complex and not suitable for large-scale production. The contact resistance of the evaporated Ni/Au double barrier layer is relatively higher, which was 37 μΩ cm 2 .…”
Section: Resultsmentioning
confidence: 99%
“…The most commonly used barrier layer in Bi 2 Te 3 -based TE devices is Ni metal. Ni has several advantages including good electrical conductivity and thermal conductivity, good wettability to the Sn-based solder, small CTE difference to Bi 2 Te 3 , good blocking effect, and low cost and high efficiency in preparation. As a barrier layer, Ni not only provides a strong interfacial bonding strength with TE legs but also forms Ni/Bi 2 Te 3 joints with low interfacial contact resistance. However, since Ni is prone to reaction with Te at high temperature, the devices become very unstable, which leads to significant performance deterioration and even device failure.…”
Section: Introductionmentioning
confidence: 99%
“…This can be accompanied by the formation of solid solutions or intermetallic compounds at contact interface, which have a lower value of electrical conductivity and mechanical strength. Therefore, in a number of cases, it is necessary to organize a diffusion barrier between the substrate and the deposited contact layer [6,11,13,14,[30][31][32].…”
Section: Factors Determining the Adhesive Strength Of Film Coatingsmentioning
confidence: 99%