Enhancement-Mode ZnO Thin-Film Transistor Grown by Metalorganic Chemical Vapor Deposition

Jo, Jungyol; Seo, Ogweon; Choi, Hyun-Woong; Lee, Byeonggon

doi:10.1143/apex.1.041202

Cited by 48 publications

(54 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Metal oxide semiconductors, in particular, are very attractive for implementation into thin-film transistors (TFTs) [1][2] mainly because of their high charge 2 carrier mobility, high optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility [3][4][5] . Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] .…”

mentioning

confidence: 99%

“…Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] .…”

mentioning

confidence: 99%

See 1 more Smart Citation

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

et al. 2010

View full text Add to dashboard Cite

The ever increasing demand for high performance electronic devices that can be fabricated onto large-area substrates employing low manufacturing cost techniques has given a boost to the development of alternative types of semiconductor materials, such as organics and metal oxides, with desirable physical characteristics that are absent in their traditional inorganic counterparts. Metal oxide semiconductors, in particular, are very attractive for implementation into thin-film transistors (TFTs) [1][2] mainly because of their high charge 2 carrier mobility, high optical transparency, excellent chemical stability, mechanical stress tolerance and processing versatility [3][4][5] . Oxide semiconductors are usually grown using vacuum-based techniques such as sputtering [6][7][8] , pulsed laser deposition [9] , chemical vapour deposition [10] , and ion-assisted deposition [11][12] . Based on these methods, the synthesis of a wide range of metal oxide semiconductors with high charge carrier mobilities and low carrier concentration has been demonstrated [7] . Many of these materials have been investigated for applications in thin-film electronics where transistors with electron mobilities up to 140 cm 2 /Vs have been demonstrated [7,[11][12][13][14][15][16] . Despite the great promise however, the application of vacuum-based technologies for the deposition of complex oxide semiconductors suffers from incompatibility with large-area substrates and hence high manufacturing cost. To this end, the development of alternative deposition methods based on solution processing paradigms could provide a breakthrough in both cost and performance by marrying fabrication simplicity with high-throughput manufacturing.In recent years a wide variety of soluble precursors compounds have been examined as potential alternatives for the fabrication of oxide-based TFTs using large area deposition methods including spin casting, dip coating and spray pyrolysis. For example, metal oxides such as zinc oxide (ZnO) [17][18][19][20][21][22] , indium oxide (In 2 O 3 ) [23][24] , indium gallium oxide (InGaO) [25] , indium zinc oxide (InZnO) [18][19][20][21][22][23][24][25][26] and zinc tin oxide (ZnSnO) [27] have been synthesised using soluble precursors and implemented into TFT structures. Despite the process simplicity, excellent charge carrier mobilities have been achieved, clearly demonstrating the significant potential of this alternative processing methodology. Here we show how spray pyrolysis (SP) can be used for the deposition of doped ZnO films and the fabrication of high electron mobility TFTs onto large area substrates under ambient atmosphere. Doping is achieved by simple physical blending of the soluble precursor compounds in water or alcohol based solutions. Among the various dopants studied, transistors fabricated using Li doped ZnO were 3 found to yield the best performance with maximum electron mobility > 50 cm 2 /Vs and on/off current modulation ratio exceeding 10 6 .Preparation of the Li doped precursor solutions is described in th...

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

et al. 2010

View full text Add to dashboard Cite

show abstract

“…Any macrodefects on the transferring path of the carrier would cause the TFT to exhibit low on-currents and large gate bias relative to the active channel of the ZnO-based TFT deposited by PVD 27,28 or CVD. 29,30 Typical transfer characteristics [log(I D )-V G ] and gate leakage current [log(I G )-V G ] of the same device are shown in Fig. 9b.…”

Section: Resultsmentioning

confidence: 99%

Characterization of Zn1−x Mg x O Films Prepared by the Sol–Gel Process and Their Application for Thin-Film Transistors

Tsay

Wang

Chiang

2009

Journal of Elec Materi

View full text Add to dashboard Cite

Transparent semiconductor thin films of Zn 1Àx Mg x O (0 £ x £ 0.36) were prepared using a sol-gel process; the crystallinity levels, microstructures, and optical properties affected by Mg content were studied. The experimental results showed that addition of Mg species in ZnO films markedly decreased the surface roughness and improved transparency in the visible range. A Zn 1Àx Mg x O film with an x-value of 0.2 exhibited the best average transmittance, namely 93.7%, and a root-mean-square (RMS) roughness of 1.63 nm. Therefore, thin-film transistors (TFTs) with a Zn 0.8 Mg 0.2 O active channel layer were fabricated and found to have n-type enhancement mode. The Zn 0.8 Mg 0.2 O TFT had a field-effect mobility of 0.1 cm 2 /V s, threshold voltage of 6.0 V, and drain current on/off ratio of more than 10 7 .

show abstract

“…show large negative threshold voltage due to native defects, and this problem was solved by using growth interruptions [6].…”

Section: Mocvd-grown Zno Thin-film Transistors (Tft) Usuallymentioning

confidence: 99%

P-type Capacitance Observed in Nitrogen-doped ZnO

Yoo¹,

Kim²,

Lee³

et al. 2012

The Transactions of The Korean Institute of Electrical Engineer

View full text Add to dashboard Cite

Enhancement-Mode ZnO Thin-Film Transistor Grown by Metalorganic Chemical Vapor Deposition

Cited by 48 publications

References 10 publications

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

Characterization of Zn1−x Mg x O Films Prepared by the Sol–Gel Process and Their Application for Thin-Film Transistors

P-type Capacitance Observed in Nitrogen-doped ZnO

Contact Info

Product

Resources

About

Enhancement-Mode ZnO Thin-Film Transistor Grown by Metalorganic Chemical Vapor Deposition

Cited by 48 publications

References 10 publications

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm2/Vs

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm2/Vs

Characterization of Zn1−x Mg x O Films Prepared by the Sol–Gel Process and Their Application for Thin-Film Transistors

P-type Capacitance Observed in Nitrogen-doped ZnO

Contact Info

Product

Resources

About

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs

Spray‐Deposited Li‐Doped ZnO Transistors with Electron Mobility Exceeding 50 cm²/Vs