Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

Hu, X.; Simin, Grigory; Yang, J.; Khan, M. Asif; Gaška, R.; Shur, M. S.

doi:10.1049/el:20000557

Cited by 175 publications

(68 citation statements)

References 4 publications

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“…На рис. 3 показана эволюция картин ДБЭ, измеренных в направлении [11][12][13][14][15][16][17][18][19][20] Холловская подвижность двумерных электронов в SiN/AlN/GaN-ГЭС при комнатной температуре состав-ляла µ = 1200 см 2 /В · с при концентрации электронов n e = 1.1 · 10 13 см −2 .…”

Section: рост Aln/gan-гетероструктурunclassified

“…Одним из наиболее перспективных направ-лений воспроизводимого получения Е-HEMT является использование AlN/GaN-гетероструктур со сверхтонким z, nm (менее 6 нм) барьером [11]. Другие подходы получе-ния Е-HEMT, такие как рост AlGaN/GaN-ГЭС с тон-ким (10 нм) AlGaN-барьером [12], стравливание части AlGaN-барьера, расположенной под затвором [13,14], формирование p−n-перехода под затвором [15], об-работку AlGaN-барьера во фторидной плазме [16], рост N-полярных ГЭС [17], не обеспечивают необходи-мой однородности, воспроизводимости и стабильности приборов. В настоящей работе представлены результаты раз-работки конструкции и технологии выращивания AlN/GaN-ГЭС для Е-HEMT.…”

Section: Introductionunclassified

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AlN/GaN-гетероструктуры для нормально закрытых транзисторов

Журавлев¹,

Малин²,

Мансуров³

et al. 2017

Физика И Техника Полупроводников

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Рассчитана конструкция AlN/GaN гетероструктур со сверхтонким AlN-барьером для нормально закрытых транзисторов. Развита технология молекулярно-лучевой эпитаксии in situ пассивированных гетероструктур SiN/AlN/GaN с двумерным электронным газом. Продемонстрированы нормально закрытые транзисторы с максимальной плотностью тока около 1 А/мм, напряжением насыщения 1 В, крутизной до 350 мС/мм, пробивным напряжением более 60 В. В транзисторах практически отсутствуют эффекты затворного и стокового коллапса тока. DOI: 10.21883/FTP.2017.03.44215.8287

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Section: рост Aln/gan-гетероструктурunclassified

Section: Introductionunclassified

AlN/GaN-гетероструктуры для нормально закрытых транзисторов

Журавлев¹,

Малин²,

Мансуров³

et al. 2017

Физика И Техника Полупроводников

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“…6). In 2000 Hu et al proposed an E-mode (enhancement-mode) AlGaN/GaN HEMT with selectively grown pn junction gate [40]. 4) It is also possible to include the MOS-HEMT as a technique for getting an E-HEMT as a structure combining the HEMT 2DEG current capability and the MOS normally-off operation.…”

Section: Gan Power Devicesmentioning

confidence: 99%

Wide Band Gap Semiconductor Devices for Power Electronics

2012

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It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG semiconductor devices are also tackled. Future trends in device development and industrialization are also addressed. Key words: SiC, GaN, Power devices, Rectifiers, MOSFETs, HEMTsWide Band Gap poluvodički sklopivi za učinsku elektroniku. U današnje vrijeme napredak u polju učinske elektronike prvenstveno dolazi razvojem i uporabom Wide Band Gap (WGB) poluvodičkih uredaja. WBG poluvodiči kao Sic, GaN i dijamant pokazuju iznimna svojstva materijala, što omogućuje korištenje pri brzim promjenama stanja, visokim naponima i visokim temperaturama. Ova jedinstvena svojstva osiguravaju kvalitativne promjene njihovom primjenon u obradi energije. Od početnih energenata (ugljen, ulje, plin ili obnovljivi izvori) do završne faze korištenja (kućanstvo, prijevoz, industrija) električna energija prolazi kroz različite faze pretvorbe energije koje su trenutno prilično neefikasne očemu govori podatak da se samo 20% početne energije iskoristi u konačnoj fazi. WGB poluvodiči povečavaju efikasnost pretvorbe zahvaljujući izvanrednim svojstvima materijala. U radu je dan pregled nedavnog napretka u razvoju visoko-naponskih WGB poluvodiča, posebno SiC i GaN te je dan pregled svojstava predstavljenih ispravljača i sklopki. Takoder u radu su opisani materijali i tehnologija WGB poluvodičkih uredaja te je opisan budući trend u razvoju uredaja i njihovom korištenju u industriji.

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“…In particular, AlGaN/GaN wafers grown on silicon substrates have gained additional attention due to their cost competitiveness with current Si technology. Prototype AlGaN/GaN FETs and power ICs have already demonstrated very low on-resistance and superior conversion efficiency in comparison with the state-of-the-art Si counterparts [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET

Lee¹,

Park²,

Lee³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD SiO 2 film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at 350 o C in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.Index Terms-AlGaN/GaN heterostructure, forming gas annealing, interface trap density, MOSHFET, post metallization annealing

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Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

Cited by 175 publications

References 4 publications

AlN/GaN-гетероструктуры для нормально закрытых транзисторов

AlN/GaN-гетероструктуры для нормально закрытых транзисторов

Wide Band Gap Semiconductor Devices for Power Electronics

Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET

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