Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

Jia, Mao; Hou, Bin; Jia, Fu-Chun; Yang, Ling; Ao, Jin-Ping; Ma, Xiao-Hua

doi:10.1109/isne56211.2023.10221606

2022 10th International Symposium on Next-Generation Electronics (ISNE) 2023

DOI: 10.1109/isne56211.2023.10221606

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Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

Mao Jia,

Bin Hou,

Fu-Chun Jia

et al.

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Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

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