Enhancement in wafer bow of free-standing GaN substrates due to high-dose hydrogen implantation: implications for GaN layer transfer applications

Singh, Rajiv K.; Radu, Ionut; Bruederl, Georg; Eichler, Christoph; Haerle, V.; Gösele, U.; Christiansen, Silke

doi:10.1088/0268-1242/22/4/022

Cited by 10 publications

(5 citation statements)

References 27 publications

(38 reference statements)

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“…These nanovoids upon high temperature annealing lead to the formation of nanocracks and microcracks inside the damage band (Fig. 3) that eventually lead to the formation of surface blisters [12][13][14][15]. .…”

Section: Resultsmentioning

confidence: 99%

Study of implantation‐induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications

Singh

Dadwal

Scholz

et al. 2010

Phys. Status Solidi (c)

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We present an overview of the implantation‐induced blistering/exfoliation process in wide bandgap semiconductors such as GaN, AlN and ZnO. These semiconductors were implanted with 50 keV hydrogen ions at various fluences and subsequently annealed at higher temperatures up to 800 °C in order to trigger surface blistering. In the case of GaN and AlN, a detailed blistering kinetics investigation was also performed. Various techniques such as optical microscopy, atomic force microscopy, cross‐sectional transmission electron microscopy and stylus profilometry were used for the characterization of the implanted samples. In the case of room temperature implanted samples, it was observed that the damage band formed inside the samples was decorated with hydrogen filled nanovoids. These nanovoids served as precursors for the formation of two‐dimensional extended defects called nanocracks and microcracks upon annealing and eventually led to surface blistering or exfoliation. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Study of implantation‐induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications

Singh

Dadwal

Scholz

et al. 2010

Phys. Status Solidi (c)

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“…13). 62 It had been reported earlier that, for successful wafer bonding to occur, the bow of 2-inch wafers should be less than about 5 lm. 27 Hence, the implanted FS-GaN could not be bonded to sapphire or Si wafers, and layer transfer was not successful.…”

Section: Ganmentioning

confidence: 99%

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

Singh

Christiansen

Moutanabbir

et al. 2010

Journal of Elec Materi

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Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The blistering phenomenon depends on many parameters such as the semiconductor material, ion fluence, ion energy, and implantation temperature. The optimum values of these parameters for compound semiconductors are presented. The blistering and splitting processes in silicon have been studied in detail, motivated by the fabrication of the widely used silicon-on-insulator wafers. Hence, a comparison of the blistering process in Si and compound semiconductors is also presented. This comparative study is technologically relevant since ion implantation-induced layer splitting combined with direct wafer bonding in principle allows the transfer of any type of semiconductor layer onto any foreign substrate of choice-the technique is known as the ion-cut or Smart-Cut (TM) method. For the aforementioned compound semiconductors, investigations regarding layer transfer using the ion-cut method are still in their infancy. We report feasibility studies of layer transfer by the ion-cut method for some of the most important and widely used compound semiconductors. The importance of characteristic values for successful wafer bonding such as wafer bow and surface flatness as well as roughness are discussed, and difficulties in achieving some of these values are pointed out

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“…Achieving high quality wafer bonding presents the most critical step in the process (11). In fact, one of the major problems faced in bonding of 2-inch free standing GaN wafers is the strong enhancement of the bow due to hydrogen implantation (12). In this work, we present a novel approach to manipulate the implantation induced bowing phenomenon.…”

Section: Bonding Of H-implanted 2-inch Fs-ganmentioning

confidence: 99%

“…4(b)]. The average stress in the damaged layer can be approximately estimated from bow measurements (12). By analogy to a heteroepitaxial compressively strained layer (14), the average stress in the damaged layer can be estimated using the modified Stoney's formula (15):…”

Section: Post-implantation Bowingmentioning

confidence: 99%

III-V and III-Nitride Engineered Heterostructures: Wafer Bonding, Ion Slicing, and More

Moutanabbir

Christiansen

Senz³

et al. 2008

ECS Trans.

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Monolithic integration of dissimilar semiconductors holds promises for efficient solar cells, advanced optoelectronics and silicon-based photonics. Since lattice mismatch limits if not prohibits the direct growth of some heterostructure devices, wafer bonding in combination with ion slicing emerges as a unique strategy by which bulk quality thin layers can be transferred onto different host materials. In addition, the concept of repeated transfer makes the process economically potentially attractive. In this presentation, we will focus on ionslicing of 4-inch InP and 2-inch free standing (fs-) GaN wafers.In the first part of our presentation, we will demonstrate how epitaxy-compatible InP-on-Si substrates can be achieved by combining wafer bonding and ioncutting. In a previous study [1], layer transfer from 4-inch InP wafers onto Si was successfully obtained using a spin-on-glass (SOG) interlayer which helps in circumventing the interfacial stress due to thermal mismatch between InP and Si which becomes even more important for 4-inch wafers. However, the advantage of SOG is diminished (if not canceled) by the fact that the fabricated heterostructures cannot resist high temperature processing required in subsequent epitaxy and device fabrication. Here, we overcome this limitation by using a 150 nm-thick SiO 2 layer grown on InP by plasmaenhanced chemical vapor deposition (PECVD). To prevent undesired out-gassing from the PECVD oxide layer during subsequent heat treatments, the InP wafers were annealed at a temperature higher than the subsequent processing temperature after SiO 2 deposition. SiO 2 /InP wafers were then implanted by 100 keV He ions at a fluence of 5 × 10 16 cm -2 . He-implanted wafers were bonded at room temperature to thermally oxidized 4-inch Si (001) Fig. 1B]. To remove the implantation and splitting induced damaged layer and improve the quality of the surface, we developed a polishing procedure. Figure 1C shows the surface of our InP-on-Si substrate after polishing. The RMS is in the order of 0.5 nm making these substrates suitable for the epitaxial growth at high temperature.In the second part, we will address different issues involved in ion slicing of 2-inch fs-GaN. This process emerges as urgent challenge by which bulk quality thin layers of GaN can be integrated into various host substrates. This will potentially help in overcoming the high cost of bulk wafers. One of the major problems faced in direct bonding of 2-inch fs-GaN wafers is the strong bowing due to hydrogen implantation which is a critical step in the ion-cut process. In figure 2(left, red line) we show the bow enhancement after hydrogen implantation at the optimal fluence for ion-cutting (2.6 × 10 17 cm -2 at the energy of 50 keV). We note that postimplantation bow reaches 40 µm making impossible any direct bonding. Our investigations show that the bowing is due the in-plane compressive strain induced by the implantation damage [2]. To overcome this problem, we developed a novel approach to manipulate the implantation induced...

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Enhancement in wafer bow of free-standing GaN substrates due to high-dose hydrogen implantation: implications for GaN layer transfer applications

Cited by 10 publications

References 27 publications

Study of implantation‐induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications

Study of implantation‐induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

III-V and III-Nitride Engineered Heterostructures: Wafer Bonding, Ion Slicing, and More

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