“…With a 2 µmthick In0.53Ga0.47As absorption layer, the theoretical maximum unit gain responsivity will be around 1 A/W at the 1.55 µm wavelength. Here, the photo-absorption constant used for the In0.53Ga0.47As layer at this wavelength is around 0.8 µm -1 [13] and we assume zero-coupling loss and singlepass light injection into the absorption layer for our device. The gain versus bias voltages under different optical pumping powers (1 to 240 µW) are also provided in the figures for reference.…”
In this work, we demonstrate the high-power and high-responsivity performance of the dual multiplication (M-) layers in In0.52 Al0.48 As based avalanche photodiode (APD). The dual M-layer design in our APD structure effectively constrains the multiplication process to a thin high-field region rather than the whole thick M-layer. It thus minimizes the space charge effect (SCE) within and avoids increasing the tunneling dark current for the case of directly shrinking M-layer thickness in APD. Furthermore, by combining the specially designed mesa shape with this dual M-layer structure, the edge breakdown can be well suppressed. These benefits lead to an ultra-high gain-bandwidth product (450 GHz; 1 A/W at unit gain) and a high saturation current (>12 mA) can be simultaneously achieved in our device. By nonlinearly driving a wavelength sweeping laser in the self-heterodyne lidar setup, it can generate an optical pulse train-like waveform, providing an effective optical modulation depth of 200% to feed into our demonstrated APD at the receiver-end. Under such scheme, the photo-generated RF (1 GHz) power from our APD with a 6.3 A/W responsivity can be as high as +6.95 dBm at a high (7 mA) output photocurrent. Such high-power and highresponsivity characteristics of our APD can further improve the signal-to-noise (S/N) ratio and dynamic range performances in each pixel of the lidar image. A high-quality 3-dimensional (D) FMCW lidar image is constructed based on our APD, without the integration of any electrical amplifier at the receiver end.
“…With a 2 µmthick In0.53Ga0.47As absorption layer, the theoretical maximum unit gain responsivity will be around 1 A/W at the 1.55 µm wavelength. Here, the photo-absorption constant used for the In0.53Ga0.47As layer at this wavelength is around 0.8 µm -1 [13] and we assume zero-coupling loss and singlepass light injection into the absorption layer for our device. The gain versus bias voltages under different optical pumping powers (1 to 240 µW) are also provided in the figures for reference.…”
In this work, we demonstrate the high-power and high-responsivity performance of the dual multiplication (M-) layers in In0.52 Al0.48 As based avalanche photodiode (APD). The dual M-layer design in our APD structure effectively constrains the multiplication process to a thin high-field region rather than the whole thick M-layer. It thus minimizes the space charge effect (SCE) within and avoids increasing the tunneling dark current for the case of directly shrinking M-layer thickness in APD. Furthermore, by combining the specially designed mesa shape with this dual M-layer structure, the edge breakdown can be well suppressed. These benefits lead to an ultra-high gain-bandwidth product (450 GHz; 1 A/W at unit gain) and a high saturation current (>12 mA) can be simultaneously achieved in our device. By nonlinearly driving a wavelength sweeping laser in the self-heterodyne lidar setup, it can generate an optical pulse train-like waveform, providing an effective optical modulation depth of 200% to feed into our demonstrated APD at the receiver-end. Under such scheme, the photo-generated RF (1 GHz) power from our APD with a 6.3 A/W responsivity can be as high as +6.95 dBm at a high (7 mA) output photocurrent. Such high-power and highresponsivity characteristics of our APD can further improve the signal-to-noise (S/N) ratio and dynamic range performances in each pixel of the lidar image. A high-quality 3-dimensional (D) FMCW lidar image is constructed based on our APD, without the integration of any electrical amplifier at the receiver end.
We demonstrate a novel avalanche photodiode (APD) design which fundamentally relaxes the trade-off between responsivity and saturation-current performance at receiver end in coherent system. Our triple In0.52Al0.48As based multiplication (M-) layers with a stepped electric (E-) field inside has more pronounced avalanche process with significantly less effective critical-field than the dual M-layer. Reduced E-field in active M-layers ensures stronger E-field allocation to the thick absorption-layer with a smaller breakdown voltage (Vbr) resulting in less serious space-charge screening effect, less device heating at high output photocurrent. Compared to the dual M-layer reference sample, the demonstrated APD exhibits lower punch-through (− 9 vs. − 24 V)/breakdown voltages (− 43 vs. − 51 V), higher responsivity (19.6 vs. 13.5 A/W), higher maximum gain (230 vs. 130), and higher 1-dB saturation-current (> 5.6 vs. 2.5 mA) under 0.95 Vbr operation. Extremely high saturation-current (> 14.6 mA), high responsivity (7.3 A/W), and decent O-E bandwidth (1.4 GHz) can be simultaneously achieved using the demonstrated APD with a 200 µm active window diameter. In coherent FMCW LiDAR test bed, this novel APD exhibits a larger signal-to-noise ratio and high-quality 3-D images than the reference dual M-layer and high-performance commercial p-i-n PD modules, while requiring significantly less optical local-oscillator (LO) power (0.5 vs 4 mW).
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