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2019
DOI: 10.1364/oe.27.015495
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Enhancement in speed and responsivity of uni-traveling carrier photodiodes with GaAs05Sb05/In053Ga047As type-II hybrid absorbers

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Cited by 12 publications
(1 citation statement)
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“…With a 2 µmthick In0.53Ga0.47As absorption layer, the theoretical maximum unit gain responsivity will be around 1 A/W at the 1.55 µm wavelength. Here, the photo-absorption constant used for the In0.53Ga0.47As layer at this wavelength is around 0.8 µm -1 [13] and we assume zero-coupling loss and singlepass light injection into the absorption layer for our device. The gain versus bias voltages under different optical pumping powers (1 to 240 µW) are also provided in the figures for reference.…”
Section: Introductionmentioning
confidence: 99%
“…With a 2 µmthick In0.53Ga0.47As absorption layer, the theoretical maximum unit gain responsivity will be around 1 A/W at the 1.55 µm wavelength. Here, the photo-absorption constant used for the In0.53Ga0.47As layer at this wavelength is around 0.8 µm -1 [13] and we assume zero-coupling loss and singlepass light injection into the absorption layer for our device. The gain versus bias voltages under different optical pumping powers (1 to 240 µW) are also provided in the figures for reference.…”
Section: Introductionmentioning
confidence: 99%