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2018
DOI: 10.1142/s0217979218500273
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Enhancement in specific heat by nanocrystallization: Softening of phonon frequencies mechanism

Abstract: The temperature-dependent specific heat C[Formula: see text](T) of nanocrystalline (NC) Cu (8 nm) and Pd (6 nm) is theoretically analyzed and compared with the specific heat of their corresponding bulk materials in the temperature range from 150 K to 300 K. It is revealed that the C[Formula: see text] values of NC Cu (Pd) are about 10% (40%) higher as compared to that of their corresponding bulk form, the softening of phonon frequencies at interfaces in NC materials is argumented as the main mechanism responsi… Show more

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Cited by 5 publications
(5 citation statements)
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“…The model has phonon frequency (ω) as one important characteristic parameter whose value depends on the size of nanoparticles. Phonon frequencies also depend on the interatomic distance and interface volume ratio, which is consistent with phenomena of softening of phonon frequencies in the nanomaterials [53] . The optimum value of ω and λ for which the function in equation (3) has the highest value depends on the size of the nanoparticles.…”
Section: Resultssupporting
confidence: 73%
See 3 more Smart Citations
“…The model has phonon frequency (ω) as one important characteristic parameter whose value depends on the size of nanoparticles. Phonon frequencies also depend on the interatomic distance and interface volume ratio, which is consistent with phenomena of softening of phonon frequencies in the nanomaterials [53] . The optimum value of ω and λ for which the function in equation (3) has the highest value depends on the size of the nanoparticles.…”
Section: Resultssupporting
confidence: 73%
“…Therefore, the present model successfully explains the size dependence of thermoelectric properties which is introduced through phonon frequencies and interface volume ratio. Such dependence of physical properties of various nanomaterials on the phonon frequencies ω and size of nanoparticles have been reported earlier [52–54] …”
Section: Resultssupporting
confidence: 69%
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“…The charge carrier contribution to heat capacity is given as the temperature derivative of internal energy [12] Cel = మ ଷ k ଶ N(E )T=γT (4) Here, N (EF) denotes the density of state near Fermi level and γ is Somerfield constant.…”
Section: Electronic Specific Heatmentioning
confidence: 99%