Enhancement in High-Field J c Properties and the Flux Pinning Mechanism of MgB2 Thin Films on Crystalline SiC Buffer Layers

Putri, W. B. K.; Tran, Duc H.; Kang, Byeongwon; Lee, N. H.; Kang, W. N.; Oh, Sangjun

doi:10.1007/s10948-013-2331-0

Cited by 11 publications

(6 citation statements)

References 17 publications

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“…The different temperatures are essential for crystalline SiC buffer layers to be properly grown on the Hastelloy substrates. This was also done in our previous works on MgB 2 /SiC/Al 2 O 3 [10][11]. The crystalline SiC was formed as the temperature increased.…”

Section: Resultssupporting

confidence: 54%

“…Even though the enhancement of J c values of MgB 2 /SiC/Hastelloy films are still lower than those of the MgB 2 films grown on SiC/Al 2 O 3 , as reported in our other related works [10,11]; still, this result indicates a positive signal of the possibility of enhancing J c values of MgB 2 films by using a SiC/Hastelloy structure.…”

supporting

confidence: 58%

“…The usage of amorphous SiC impurity layers had also proven to improve the critical current density (J c ) values of MgB 2 films [9]. Furthermore, based on our previous works [10][11], MgB 2 films with crystalline SiC buffer layers deposited on Al 2 O 3 substrates have been confirmed to enhance J c values.…”

Section: Introductionmentioning

confidence: 94%

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A possibility of enhancing J_cin MgB₂film grown on metallic hastelloy tape with the use of SiC buffer layer

Putri¹,

Kang²,

Ranot³

et al. 2014

Progress in Superconductivity and Cryogenics

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We have grown MgB 2 on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and 600 o C by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, MgB 2 films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the MgB 2 films on SiC/Hastelloy deposited at 500 and 600 o C. From the surface analysis, smaller and denser grains of MgB 2 tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of MgB 2 tapes.

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Section: Resultssupporting

confidence: 54%

supporting

confidence: 58%

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A possibility of enhancing J_cin MgB₂film grown on metallic hastelloy tape with the use of SiC buffer layer

Putri¹,

Kang²,

Ranot³

et al. 2014

Progress in Superconductivity and Cryogenics

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“…The effect of SiC buffer layer on the flux pinning and J c in MgB 2 films have been previously reported; with all showing improvement of J c at elevated field [4][5][6]. The effective pinning improvement of all the samples reported is mainly originated from their columnar grain boundaries.…”

Section: Introductionmentioning

confidence: 71%

Superconducting properties of SiC-buffered-MgB₂tapes

Putri¹,

Kang²,

Duong³

et al. 2015

Progress in Superconductivity and Cryogenics

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Production of MgB 2 film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of MgB 2 -Hastelloy and the slightly increased T c of MgB 2 tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when MgB 2 tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in MgB 2 tape in affecting the superconducting properties is considerably important for practical applications.

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“… 19 − 23 For the thin-film form of MgB 2 , various kinds of buffer layers have been tried. 24 − 29 The use of ZnO as a buffer layer on metallic substrates has yielded promising results. ZnO buffer layers with thicknesses ranging from tens to hundreds of nanometers do not significantly degrade the T c values while suppressing delamination and hindering unwanted reactions between MgB 2 and the metal substrates.…”

Section: Introductionmentioning

confidence: 99%

Enhancement in High-Field J_c Properties and the Flux Pinning Mechanism of ZnO-Buffered MgB₂ Films

Putra

Jung

et al. 2023

ACS Omega

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We investigated the flux pinning properties in terms of the critical current density (J c) and pinning force density (F p) of MgB2 films with ZnO buffer layers of various thicknesses. At higher thicknesses of the buffer layer, significantly larger J c values are observed in the high-field region, whereas J c values in the low- and intermediate-field regions remain largely unaffected. A secondary point-pinning mechanism other than primary grain boundary pinning is observed in the F p analysis, which depends on the thickness of the ZnO buffer layer. Moreover, a close relationship between the Mg and B bond ordering and the fitting parameter of secondary pinning is obtained, indicating that the local structural distortion of MgB2 induced by ZnO buffer layers with different thicknesses may contribute to flux-pinning enhancement in the high-field region. Discovering further advantages of ZnO as a buffer layer other than the delamination resistance it provides will help to develop a MgB2 superconducting cable with a high J c for power applications.

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Enhancement in High-Field J c Properties and the Flux Pinning Mechanism of MgB2 Thin Films on Crystalline SiC Buffer Layers

Cited by 11 publications

References 17 publications

A possibility of enhancing J_cin MgB₂film grown on metallic hastelloy tape with the use of SiC buffer layer

A possibility of enhancing J_cin MgB₂film grown on metallic hastelloy tape with the use of SiC buffer layer

Superconducting properties of SiC-buffered-MgB₂tapes

Enhancement in High-Field J_c Properties and the Flux Pinning Mechanism of ZnO-Buffered MgB₂ Films

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Enhancement in High-Field J c Properties and the Flux Pinning Mechanism of MgB2 Thin Films on Crystalline SiC Buffer Layers

Cited by 11 publications

References 17 publications

A possibility of enhancing Jcin MgB2film grown on metallic hastelloy tape with the use of SiC buffer layer

A possibility of enhancing Jcin MgB2film grown on metallic hastelloy tape with the use of SiC buffer layer

Superconducting properties of SiC-buffered-MgB2tapes

Enhancement in High-Field Jc Properties and the Flux Pinning Mechanism of ZnO-Buffered MgB2 Films

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Product

Resources

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A possibility of enhancing J_cin MgB₂film grown on metallic hastelloy tape with the use of SiC buffer layer

A possibility of enhancing J_cin MgB₂film grown on metallic hastelloy tape with the use of SiC buffer layer

Superconducting properties of SiC-buffered-MgB₂tapes

Enhancement in High-Field J_c Properties and the Flux Pinning Mechanism of ZnO-Buffered MgB₂ Films