Enhancement/depletion MESFETs of diamond and their logic circuits

Hokazono, A.; Ishikura, Takefumi; Nakamura, Kenichi; Yamashita, Satoshi; Kawarada, Hiroshi

doi:10.1016/s0925-9635(96)00726-1

Cited by 60 publications

(30 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1 Hydrogen-induced surface conductivity can also be utilized to generate holes with an extremely low activation energy, 2,3 and high-performance devices have been demonstrated using this type of layer. 4,5 n-type doping has been much more elusive, with success in substitutional phosphorus doping achieved by relatively few laboratories; 6 an activation energy of 0.6 eV also makes phosphorus an unsuitable dopant for many applications. However, p-n junctions have been demonstrated utilizing the boron-phosphorus interface.…”

mentioning

confidence: 99%

n -type conductivity in ultrananocrystalline diamond films

Williams

Curat

Gerbi

et al. 2004

Applied Physics Letters

154

View full text Add to dashboard Cite

Hall effect measurements have been carried out to determine the carrier density and mobilities in ultrananocrystalline diamond films grown with added nitrogen. The results show clear n-type conductivity with very low thermal activation energy. Mobility values of 1.5cm2V−1s−1 are found for a sheet carrier concentration of 2×1017cm−2. These measurements indicate that ultrananocrystalline films grown with high nitrogen levels in the growth gas mixture can have bulk carrier concentrations of up to 1021, which is very high for diamond films. The n-type nature of this material was also confirmed by Seebeck effect measurements.

show abstract

mentioning

confidence: 99%

n -type conductivity in ultrananocrystalline diamond films

Williams

Curat

Gerbi

et al. 2004

Applied Physics Letters

154

View full text Add to dashboard Cite

show abstract

“…On the other hand, it was possible to use hydrogenated diamond surface to fabricate field-effect-transistor structures. 1 The mechanism of this kind of conductivity is still under controversial discussion. Experimentally it was found that, on diamond surfaces which were treated with an oxygen plasma, the surface conductivity vanishes.…”

mentioning

confidence: 99%

Influence of adsorbates on the surface conductivity of chemical vapor deposition diamond

Szameitat

Jiang

Beyer

2000

Applied Physics Letters

View full text Add to dashboard Cite

To investigate the mechanism of the diamond surface conductivity, temper experiments have been performed on chemical-vapor-deposited (CVD) diamond films under vacuum conditions. The surface conductivity of these films was measured as a function of temperature and in contact with different gas atmospheres. These results were compared with those obtained by gas evolution experiments performed on CVD diamond samples of the same kind, demonstrating the possible role of CO adsorption to the surface conductivity

show abstract

“…Then, after electron-beam lithography and self-aligned processes, Al was evaporated directly on H-terminated surface to form a gate contact. The self-aligned process was firstly proposed by Hokazono et al [4]. The details of our processes were described previously [5].…”

Section: Rf Power Diamond Fetsmentioning

confidence: 99%

Diamond RF FETs and other approaches to electronics

Kasu

Ueda

Kageshima

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Diamond semiconductor possesses exceptional physical properties, such as high thermal conductivity, high breakdown field, and high mobility, and is therefore expected to offer the highest performance among semiconductors as high‐frequency, high‐power transistors. At present the most critical issue in achieving diamond transistors is the lack of an n‐type or p‐type dopant with low activation energy. This paper reviews approaches towards electronic‐device application of diamond done mainly by NTT Basic Research Laboratories. First it describes our diamond field‐effect transistors with 0.1‐μm gate length, which exhibit high cut‐off frequencies for the current and power gains, fT and fMAX, of 45 GHz and of 120 GHz, and output power density of 2.1 W/mm at 1 GHz. Next it shows how doping efficiency in ion implantation can be improved by using high‐pressure high‐temperature annealing. Finally, it describes our concept of diamond/nitride heterostructure and presents results that confirm its feasibility. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Enhancement/depletion MESFETs of diamond and their logic circuits

Cited by 60 publications

References 9 publications

n -type conductivity in ultrananocrystalline diamond films

n -type conductivity in ultrananocrystalline diamond films

Influence of adsorbates on the surface conductivity of chemical vapor deposition diamond

Diamond RF FETs and other approaches to electronics

Contact Info

Product

Resources

About