Enhanced wavelength shift in partly gain-coupled distributed feedback lasers using quantum well intermixing

Zhan, Li; Chan, K. S.; Pun, Edwin Yue-Bun; Ho, H.P.

doi:10.1016/j.optcom.2003.09.082

Cited by 3 publications

(1 citation statement)

References 22 publications

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“…To further extend its applications in telecommunications, it is important to consider its integration in photonic circuits which is enabled by varying the band gap of a material locally. Quantumwell intermixing (QWI) can be used to vary the band gap and can thus be used to integrate modulators, amplifiers and lasers in the same device [8]. Recently selective QWI has been demonstrated in GaInNAs/GaAs quantum wells by using different SiO 2 deposition methods and post-thermal annealing [9,10].…”

Section: Introductionmentioning

confidence: 99%

Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study

Qiu¹,

Sun²,

Rorison³

et al. 2008

Semicond. Sci. Technol.

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The effect of quantum-well intermixing on the material gain of a GaInNAs/GaAs quantum-well laser is investigated theoretically. The diffusion of gallium and indium atoms in the intermixed sample is assumed and their compositional profiles are modelled using Fick's law. The band-anti-crossing model is used to calculate the band structure of the GaInNAs quantum well, which is appropriate for this non-randomly-alloyed material system. The calculated results show good agreement with the observed photoluminescence excitation for both non-intermixed and intermixed samples, which confirms this model. It is found that the strain gradient, the variation of material band gap and the degeneracy between heavy and light holes are the main factors determining the quantized energy levels of the intermixed quantum well. With the increase of diffusion length, the material gain and differential gain decrease due to the increase of the conduction band effective mass and the rapid decrease of the dipole moments. These characteristics of quantum-well intermixing effects will be useful in the design of integrated photonic devices based on this material.

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Section: Introductionmentioning

confidence: 99%

Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study

Qiu¹,

Sun²,

Rorison³

et al. 2008

Semicond. Sci. Technol.

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Distributed feedback lasing from dye-doped glass films using photopatterned gold nanoparticles

Fukushima

Yanagi

Hayashi

et al. 2005

Journal of Applied Physics

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We found a tunable lasing action of dye-doped glass films using a distributed feedback (DFB) resonator composed of gold (Au) nanoparticles. The Au-DFB resonators having various periodic spacings of 400–600 nm were fabricated by photoreduction of chloroauric ions doped in silica/titania (SiO2∕TiO2) sol-gel films using two-beam interference of a He-Cd laser. After lamination of a SiO2∕TiO2 film containing Rhodamine B (RB), the device was pumped with a frequency-doubled yttrium aluminum garnet laser. As compared to the amplified spontaneous emission [full width at half maximum (FWHM) ∼20nm] from a RB-doped film without DFB, the laminated device indicated feedback-gained narrowing of the emission (FWHM∼1nm). Moreover, their peak wavelengths were shifted according to the tuned spacing of the Au-DFB resonator.

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Electron-LO phonon scattering in Ga1-xInxNyAs1-y/GaAs quantum well

Qian¹,

Wang²,

Wang³

et al. 2013

Acta Phys. Sin.

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Within the framework of effective mass approximation, the values of energy eigenvalue En in Ga1-xInxNyAs1-y/GaAs quantum well are theoretically calculated using shooting method. In addition, we calculate the electron-LO phonon scattering and mean scattering rate at different temperatures, well width, N concentrations and In concentrations for an electron initially in the second subband and finally in the ground state using Fermi’s golden rule. It is shown that the electron-LO phonon scattering and mean scattering rate increase with the increase of N concentration under the In concentration constant. The electron-LO phonon scattering and mean scattering rate decrease with the increase of In concentration under the In concentration constant. The electron-LO phonon scattering increases monotonically with the increase of temperature. When the temperature is relatively low, the variation of mean scattering rate is not obvious with the increase of temperature When the temperature is relatively high, mean scattering rate increases with the increase of temperature. The scattering and mean scattering rate increase up to their maxima and then begin to decrease as the well width increases. The maximum value is reached when the well width is about 200 Å. Our calculated results are meaningful and can be used for designing the optoelectronic devices based on Ga1-xInxNyAs1-y/GaAs quantum well.

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Enhanced wavelength shift in partly gain-coupled distributed feedback lasers using quantum well intermixing

Cited by 3 publications

References 22 publications

Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study

Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study

Distributed feedback lasing from dye-doped glass films using photopatterned gold nanoparticles

Electron-LO phonon scattering in Ga1-xInxNyAs1-y/GaAs quantum well

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