Enhanced ultraviolet photo-response in Dy doped ZnO thin film

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

doi:10.1063/1.5015959

Cited by 30 publications

(13 citation statements)

References 31 publications

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“…Figure 7b–d shows the Tauc plot of Eu 2− x Fe x Ti 2 O 7 (for x = 0.0, 0.1, 0.2), assuming direct transition in between conduction and valence band. [ 58 ] The energy bandgaps ( E g ) were determined from the relation [ 58–60 ]

α h ν = A {false(h ν - E_{normalg} false)}^{n}

where n = 1/2 corresponds to an allowed direct electronic transition. From Figure 7b–d, it has been observed that Eu 2− x Fe x Ti 2 O 7 has multiple bandgaps.…”

Section: Resultsmentioning

confidence: 99%

Effect of f–d and d–d Interactions on Dielectric and Optical Properties of Pyrochlore Eu_2−xFe_xTi₂O₇

Alam

Pal

Ghosh

et al. 2022

Physica Status Solidi (b)

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X‐ray diffraction, Raman spectroscopy, Fourier‐transform infrared (FTIR) spectroscopy, dielectric property, and UV–vis spectroscopy studies of pyrochlore Eu2−xFexTi2O7 have been performed. The X‐ray pattern shows that Eu2−xFexTi2O7 has a pure pyrochlore phase up to x = 0.2. The structural analysis shows a strong distortion of TiO6 octahedral due to the presence of the interstitial anionic vacant site. A significantly increased band intensity of FTIR spectrum with Fe doping suggests the enhanced anionic disorder in the system. The broadening of Raman peaks with increasing x supports the increased disorder in TiO6 octahedral. Dielectric study of Eu2Ti2O7 shows a diffused dielectric transition below 150 K. The dielectric diffusiveness and transition temperature get enhanced with Fe doping due to enhanced anionic distortion. The dielectric constant of Eu2−xFexTi2O7 is also increased on Fe doping. The UV–vis spectrum exhibits a strong absorbance in the UV region and a redshift with Fe doping. The Tauc plot of UV–vis spectrum shows multiple successive valence band edges and the bandgap gets reduced with Fe doping due to the formation of new interbands. Thus, these materials are interesting for people searching for material to be used in tunable electrical and optical devices.

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α h ν = A {false(h ν - E_{normalg} false)}^{n}

where n = 1/2 corresponds to an allowed direct electronic transition. From Figure 7b–d, it has been observed that Eu 2− x Fe x Ti 2 O 7 has multiple bandgaps.…”

Section: Resultsmentioning

confidence: 99%

Effect of f–d and d–d Interactions on Dielectric and Optical Properties of Pyrochlore Eu_2−xFe_xTi₂O₇

Alam

Pal

Ghosh

et al. 2022

Physica Status Solidi (b)

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“…These elements present excellent physicochemical properties based on the electronic transitions occurring within the 4f energy shell [ 16 ]. As a result, their high conductivity, magnetic, electrochemical, and luminescent properties enabled their effective use as photocatalysts [ 17 ], photodetectors [ 18 ], Schottky diodes [ 19 ], and UV detectors [ 20 ], to cite only a few. Moreover, rare-earth compounds have been proved as promising candidates for improving gas sensing performance owing to their catalytic nature, fast oxygen ion mobility, and high surface basicity [ 21 , 22 ].…”

Section: Introductionmentioning

confidence: 99%

Dysprosium Doped Zinc Oxide for NO2 Gas Sensing

Fidha

Bitri

Mahjoubi

et al. 2022

Sensors

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Pure and dysprosium-loaded ZnO films were grown by radio-frequency magnetron sputtering. The films were characterized using a wide variety of morphological, compositional, optical, and electrical techniques. The crystalline structure, surface homogeneity, and bandgap energies were studied in detail for the developed nanocomposites. The properties of pure and dysprosium-doped ZnO thin films were investigated to detect nitrogen dioxide (NO2) at the ppb range. In particular, ZnO sensors doped with rare-earth materials have been demonstrated as a feasible strategy to improve the sensitivity in comparison to their pure ZnO counterparts. In addition, the sensing performance was studied and discussed under dry and humid environments, revealing noteworthy stability and reliability under different experimental conditions. In this perspective, additional gaseous compounds such as ammonia and ethanol were measured, resulting in extremely low sensing responses. Therefore, the gas-sensing mechanisms were discussed in detail to better understand the NO2 selectivity given by the Dy-doped ZnO layer.

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“…To realize high-performance deep-UV optoelectronic devices, great efforts have been devoted to studying doped ZnMgO [ 25 ], such as Dy [ 26 ], Ag [ 27 ], Al [ 28 ], Ga [ 29 ], and As [ 30 ]. Among these elements, Ga is the most effective n-type dopant in ZnO ascribing to the covalent bond length of Ga-O (1.92 Å) is similar to that of Zn-O (1.97 Å).…”

Section: Introductionmentioning

confidence: 99%

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

Wang

Jiao

et al. 2022

Micromachines

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High Mg content (60%) ZnMgO samples with and without Ga dope were grown by an RF magnetron sputtering system. The effect of Ga dope on the ZnMgO sample and the respective ultraviolet photodetectors (UVPD) device’s performance were carefully studied by various experimental methods. The investigations of the structure and optical properties of the ZnMgO sample established that the Ga doped sample has a better crystal quality and larger band gap (5.54 eV). The current-voltage characteristics indicate that both the photocurrent and dark current were enhanced after Ga dope. Under 12 V bias, the undoped UVPD show two spectral response peaks at 244 nm and 271 nm with a responsivity of 1.9 A/W and 0.38 A/W, respectively. While the Ga doped UVPD showed only one response peak at 241 nm and the deep UV responsibility up to 8.9 A/W;, as the bias increased from 12 V to 60 V, the responsiveness raised to 52 A/W, with a signal to noise ratio (241 nm/700 nm) as high as 105. Combining the results of XRD, PL spectrum and XPS, the enhanced ultraviolet photoresponse of the Ga dope device contributed to improving the crystal quality and “dopant-defect pairing effect” caused by Ga doping, which led to a considerable reduction in the number of ionized impurities in the scatting centers, and enhanced the carrier’s mobility. Our work demonstrates that even a high Mg content ZnMgO can exhibit enhanced UV performance after a Ga dope due to the dopant-defect pairing effect, which confirmed the advantage of the use of ZnMgO in the deep-UV region.

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Enhanced ultraviolet photo-response in Dy doped ZnO thin film

Cited by 30 publications

References 31 publications

Effect of f–d and d–d Interactions on Dielectric and Optical Properties of Pyrochlore Eu_2−xFe_xTi₂O₇

Effect of f–d and d–d Interactions on Dielectric and Optical Properties of Pyrochlore Eu_2−xFe_xTi₂O₇

Dysprosium Doped Zinc Oxide for NO2 Gas Sensing

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

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Enhanced ultraviolet photo-response in Dy doped ZnO thin film

Cited by 30 publications

References 31 publications

Effect of f–d and d–d Interactions on Dielectric and Optical Properties of Pyrochlore Eu2−xFexTi2O7

Effect of f–d and d–d Interactions on Dielectric and Optical Properties of Pyrochlore Eu2−xFexTi2O7

Dysprosium Doped Zinc Oxide for NO2 Gas Sensing

Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

Contact Info

Product

Resources

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Effect of f–d and d–d Interactions on Dielectric and Optical Properties of Pyrochlore Eu_2−xFe_xTi₂O₇

Effect of f–d and d–d Interactions on Dielectric and Optical Properties of Pyrochlore Eu_2−xFe_xTi₂O₇