Enhanced thermoelectric properties of cobalt silicide-silicon heterostructured nanowires

Lee, Seungho; Cho, Hyeonsu; Yoon, Sol; Seo, Myunghae; Yoo, Hyeongseok; Kong, Byoung Don; Meyyappan, M.; Baek, Chang‐Ki

doi:10.1109/tnano.2020.3044318

Cited by 2 publications

(2 citation statements)

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“…8,9) In the spintronic device developments, group IV semiconductors and the metal materials, e.g. Ti, [10][11][12][13][14] Co, [15][16][17] Ni, [18][19][20][21][22][23][24] and Mn, 25) have also attracted considerable attention for future applications such as nanoscale devices using ferromagnetic silicide and germanide NWs, since a large magnetoresistance (MR) effect, [26][27][28] a spin-valve effect, 29) and a transistor operation 30,31) have intensively been reported. Group IV semiconductors, Si and Ge, are easily forming silicide and germanide alloys with the metal materials mentioned above.…”

Section: Introductionmentioning

confidence: 99%

“…Group IV semiconductors, Si and Ge, are easily forming silicide and germanide alloys with the metal materials mentioned above. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] We have recently been observing anomalous magnetotransport properties and the large MR effect up to +20% in lateral Si NW devices with ferromagnetic Ni nanolayer electrodes, in which the nickel silicide (Ni x Si) is formed at the interface between NWs and electrodes. 32) For creating NW spintronic devices using such silicide (or, germanide) alloy materials, the control of magnetic domains in Ni nanolayer electrode patterns is crucial for controlling magnetotransport properties in Si NWs.…”

Section: Introductionmentioning

confidence: 99%

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Magnetic domain control and its dependence on aspect ratio and thickness in Ni nanolayer patterns for nanowire spintronic devices

Hara

2023

Jpn. J. Appl. Phys.

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We investigate the aspect ratio and thickness dependence of magnetic domain formation in multiple types of ferromagnetic Ni nanolayer electrode patterns. Controlling magnetic domains is critical for spintronic devices using a group IV semiconductor, e.g., Si and Ge, nanowire as the electrodes with magnetic tunnel junction require parallel and anti-parallel magnetization configurations. Single magnetic domains are obtained in the Ni nanolayer electrode patterns on SiO2/Si substrate with the aspect ratio of 20 and the thickness of 40 nm even under the as-deposition condition, while other electrode patterns are mostly showing multiple magnetic domains. The results obtained by magnetic force microscopy also show that the magnetization switching is observed in the electrode pattern with a single magnetic domain. The results in this study show that the suitable design of the dimensions of nanolayer patterns is a key to constructing a single magnetic domain in a ferromagnetic electrode for nanowire spintronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Magnetic domain control and its dependence on aspect ratio and thickness in Ni nanolayer patterns for nanowire spintronic devices

Hara

2023

Jpn. J. Appl. Phys.

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Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films

Schwinge,

Hoffmann,

Hertel

et al. 2023

Review of Scientific Instruments

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Characterization of thermoelectric transport properties for temperature sensing, cooling, and energy harvesting applications is necessary for a reliable device performance in progressively minimized computer chips. In this contribution, we present a fully automated thermovoltage and sheet resistance measurement setup, which is calibrated and tested for the production of silicon- and silicon-germanium-doped as well as silicide complementary metal–oxide–semiconductor-compatible thin films. A LabVIEW-programmed software application automatically controls the measurement and recording of thermovoltages at individually defined temperature set points. The setup maps average temperature and temperature differences simultaneously in the regime from 40 to 70 °C. The Seebeck coefficient calculated by means of the inversion method was used to eliminate the offset voltage influence. Finally, we present and discuss the Seebeck coefficient as well as the sheet resistance for application-specific different temperature set points of several doped poly-Si, poly-SiGe, and silicides.

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Enhanced thermoelectric properties of cobalt silicide-silicon heterostructured nanowires

Cited by 2 publications

References 40 publications

Magnetic domain control and its dependence on aspect ratio and thickness in Ni nanolayer patterns for nanowire spintronic devices

Magnetic domain control and its dependence on aspect ratio and thickness in Ni nanolayer patterns for nanowire spintronic devices

Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films

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