2014
DOI: 10.1063/1.4872250
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Enhanced thermoelectric performance in Cd doped CuInTe2 compounds

Abstract: CuIn1−xCdxTe2 materials (x = 0, 0.02, 0.05, and 0.1) are prepared using melting-annealing method and the highly densified bulk samples are obtained through Spark Plasma Sintering. The X-ray diffraction data confirm that nearly pure chalcopyrite structures are obtained in all the samples. Due to the substitution of Cd at In sites, the carrier concentration is greatly increased, leading to much enhanced electrical conductivity and power factor. The single parabolic band model is used to describe the electrical t… Show more

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Cited by 73 publications
(65 citation statements)
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“…With the increase of Fe content, the temperature dependence of Hall mobility approaches to l H $ T À3/2 near room temperature in the samples with high carrier concentrations (x ¼ 0.03, 0.05, 0.1), indicating acoustic phonon scatterings start dominating carrier scattering mechanism. 27,28 At temperatures below 50 K the Hall mobility tends towards a constant value, suggestive of neutral impurity scattering. For the 1% Fe doped sample (x ¼ 0.01), the temperature dependence of mobility and is more flat at both high and low temperature.…”
Section: Electrical Transport Propertiesmentioning
confidence: 99%
“…With the increase of Fe content, the temperature dependence of Hall mobility approaches to l H $ T À3/2 near room temperature in the samples with high carrier concentrations (x ¼ 0.03, 0.05, 0.1), indicating acoustic phonon scatterings start dominating carrier scattering mechanism. 27,28 At temperatures below 50 K the Hall mobility tends towards a constant value, suggestive of neutral impurity scattering. For the 1% Fe doped sample (x ¼ 0.01), the temperature dependence of mobility and is more flat at both high and low temperature.…”
Section: Electrical Transport Propertiesmentioning
confidence: 99%
“…Doping was widely employed to improve the carrier concentration and the electrical conductivity, such as CuIn(Ga) 1−x M x Te 2 (M=Zn, Mn, Cd, Hg, Ni, Ag, Gd) [114][115][116][117][118], Cu 1−x Fe 1+x S 2 [119], Cu 3 Sb 1−x M x Se 4 (M=Al, In, Sn, Ge, Bi) [35,[120][121][122] and Cu 2 Cd 1−x In x SnSe 4 [123]. Introducing vacancies is another practical way for the electrical transport optimization as well as the lattice thermal conductivity minimizing.…”
Section: Tetragonal Diamond-like Compoundsmentioning
confidence: 99%
“…Among the currently developed state-of-the-art TE materials, a few binary chalcogenides, such as SnSe, 1,2 In4Se3 3-6 and PbTe, 7,8 have been explored extensively; while the ternary chalcogenides, such as CuGaTe2 [9][10][11] and CuInTe2, [12][13][14][15] have also attracted research interests in recent years because of their unique crystal structures. It was reported that Ga2Te3 forms pseudobinary alloys with Cu2Te in a wide range of compositions (Cu2Te)1-y(Ga2Te3)y.…”
Section: Introductionmentioning
confidence: 99%