Enhanced Thermoelectric Figure of Merit in Stannite–Kuramite Solid Solutions Cu2+xFe1–xSnS4–y (x = 0–1) with Anisotropy Lowering

Goto, Yosuke; Naito, Fumihiko; Sato, Ryo; Yoshiyasu, Keigo; Itoh, Takanori; Kamihara, Yoichi; Matoba, Masanori

doi:10.1021/ic401310c

Cited by 33 publications

(33 citation statements)

References 48 publications

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“…Introducing vacancies is another practical way for the electrical transport optimization as well as the lattice thermal conductivity minimizing. Cu vacancy is the most common for p-type doping such as Cu 1−x In(Ga)Te 2 [87,124] and Cu 3−x SbSe 4 [125], which is due to the small formation energy of this defect, while anion vacancies are feasible for donor doping as seen in CuFeS 2−x [74] and Cu 2 FeSnS 4−x [126].…”

Section: Tetragonal Diamond-like Compoundsmentioning

confidence: 99%

“…12a. It can be qualitatively utilized as an indicator map to discover or optimize high-performance tetragonal dia- Figure 12 (a) Distortion parameter as a function of the lattice parameter a [28,72,87,[106][107][108]119,123,126,136,137]. (b) Temperature dependence of zT for tetragonal diamond-like compounds [28,29,87,112,119].…”

Section: Tetragonal Diamond-like Compoundsmentioning

confidence: 99%

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Copper chalcogenide thermoelectric materials

et al. 2018

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Cu-based chalcogenides have received increasing attention as promising thermoelectric materials due to their high efficiency, tunable transport properties, high elemental abundance and low toxicity. In this review, we summarize the recent research progress on this large family compounds covering diamond-like chalcogenides and liquid-like Cu 2 X (X=S, Se, Te) binary compounds as well as their multinary derivatives. These materials have the general features of two sublattices to decouple electron and phonon transport properties. On the one hand, the complex crystal structure and the disordered or even liquid-like sublattice bring about an intrinsically low lattice thermal conductivity. On the other hand, the rigid sublattice constitutes the charge-transport network, maintaining a decent electrical performance. For specific material systems, we demonstrate their unique structural features and outline the structure-performance correlation. Various design strategies including doping, alloying, band engineering and nanostructure architecture, covering nearly all the material scale, are also presented. Finally, the potential of the application of Cu-based chalcogenides as high-performance thermoelectric materials is briefly discussed from material design to device development.

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Section: Tetragonal Diamond-like Compoundsmentioning

confidence: 99%

Section: Tetragonal Diamond-like Compoundsmentioning

confidence: 99%

Copper chalcogenide thermoelectric materials

et al. 2018

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“…Not just chalcopyrite type quaternary chalcogenides, but the other structural forms of these quaternary chalcogenides such as wurtzite, orthorhombic, stannite and stannite‐kuramite etc. have been explored in the recent times ,,,. There is a possibility that random distribution of cations and anions in the unit cell gave rise to structural anisotropy which is responsible for lowering thermal conductivity in such material.…”

Section: Thermoelectric Applicationsmentioning

confidence: 99%

“…The scaled‐up synthesis procedures and versatile techniques have been established to further reduce the cost function for its effective commercial PV realization ,,. Interestingly, huge range of Cu‐based quaternary chalcogenide Cu 2 M I M II X 4 (where, M I =Zn, Ni, Co, Fe, Mn, Cd and Hg; M II =Si, Sn and Ge and X=S and/or Se) materials have been emerged in the recent time claiming vivid application of these material in diverse fields ,,,. This review presents the key features and recent developments in the direction of synthesis and multifunctional applications of these Cu‐based quaternary chalcogenides.…”

Section: Introductionmentioning

confidence: 99%

Multifunctional Copper‐Based Quaternary Chalcogenide Semiconductors Toward State‐of‐the‐Art Energy Applications

Kush

Deka

2018

ChemNanoMat

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Cu-based quaternary chalcogenide semiconductors have been attractive materials in many aspects since the last decade. Most of the scientific literature about quaternary chalcogenides is dedicated to photovoltaic (PV) research with no astonishment as the material initially emerged as a costeffective replacement of expensive Si for PV applications. These materials possess all the important properties such as, abundant and non-toxic constituent elements, efficient charge transport, optimum band gap, and high absorption coefficient for being an efficient PV material in either thin film or nanoparticle form. However, in the recent few years, a new range of quaternary materials Cu 2 M I M II X 4 (where, M I =Zn, Ni, Co, Fe, Mn, Cd and Hg; M II =Si, Sn and Ge and X=S and/or Se) have evolved and found applications in thermoelectrics, photocatalysis and photoelectrocatalysis, sensors and bat-teries etc. The combination of properties exhibited by these quaternary chalcogenides such as optical and electric, optical and magnetic, electric and thermal makes them potential materials, which could be utilized in multiple applications. Although the PV properties of these quaternary chalcogenides has been discussed earlier in many reports, the other versatile applications of the material have not been reviewed yet. The present article sheds light on the multifunctional aspects of various new Cu-based quaternary chalcogenides, their synthesis, effect of doping on their properties, and then elaborating the discussion on their chemical and physical properties that are helpful in different applications along with photovoltaics. Here, we discuss synthetic methods bestowing enhanced features and also summarize their achieved efficiency in recent years. Scheme 1. Schematic representation for the derivation of quaternary chalcogenides. 2 3 4 5 6 7 8

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“…Although the ZT values obtained for these are still about 0.9, these are still lower than those for ternary compounds. It has been reported that for quaternary materials, relatively low thermal conductivity and good electrical properties could be achieved by appropriate doping [21][22][23][24]. It has been reported by various workers that modification of electrically conducting units by doping of Cu 2+ create more hole carriers and extra conducting pathways [25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterisation of CZTSe bulk materials for thermoelectric applications

Sharma¹

2020

Nanosystems: Phys. Chem. Math.

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Quaternary Copper Zinc Tin Selenide (CZTSe) is a preferred candidate as an absorber layer in solar cells due to its non-toxicity and the abundancy of its constituents. This material also has thermoelectric properties suitable for solar thermal energy conversion and waste heat recovery. The preparation of bulk thermoelectric materials is a tedious, multistep task and requires considerable time and energy consumption for tuning of desired properties. Here one step solid state reaction has been used for synthesis of bulk CZTSe materials in five different ratios of elemental precursors: Cu, Zn, Sn and Se. Atomic Force Microscopy (AFM), X-Ray Photoelectron Spectroscopy (XPS) and X-ray diffraction (XRD) techniques have been used for structural and compositional analysis of the materials. AFM analysis shows significant difference in roughness parameters and grain size with respect to Cu/Zn variations. The XRD spectra of various samples show the formation of CZTSe materials. Raman spectra verifies absence of secondary phases. XPS analysis reveals constituent atoms display chemical valences of +1, +2, +4, and −1 for Cu, Zn, Sn, and Se, respectively. The stoichiometric sample, Cu 2 ZnSnSe 4 , exhibited the maximum power factor 0.30 mW•m −1 K −2 , having carrier concentration in the range of 10 18-10 19 cm −3 and resistivity in the range of 0.21 to 0.24 Ω•cm. Keywords: thermoelectric devices, thermoelectric effects in semiconductors and insulators, Hall effect in semiconductors, Raman spectroscopy in chemical analysis, photoelectron spectroscopy in chemical analysis, powder diffraction X-ray, transport properties (electric and thermal conductivity, thermoelectric effects, etc.).

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Enhanced Thermoelectric Figure of Merit in Stannite–Kuramite Solid Solutions Cu_2+xFe_1–xSnS_4–y (x = 0–1) with Anisotropy Lowering

Cited by 33 publications

References 48 publications

Copper chalcogenide thermoelectric materials

Copper chalcogenide thermoelectric materials

Multifunctional Copper‐Based Quaternary Chalcogenide Semiconductors Toward State‐of‐the‐Art Energy Applications

Synthesis and characterisation of CZTSe bulk materials for thermoelectric applications

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