Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

Yoon, Dong Soo; Roh, Jae–Sung; Lee, Sung Man; Baik, Hong Koo

doi:10.1007/s11664-003-0206-z

Cited by 5 publications

(3 citation statements)

References 24 publications

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“…Because of its quasi-metallic conductivity and excellent thermal and chemical stability, titanium nitride (TiN) has already been used as a gate electrode for field effect transistors and memory devices in the semiconductor industry and as a capacitor electrode and copper diffusion barrier in interconnect technology. [17][18][19][20][21] Here, we show that TiN/n-Si heterocontacts exhibit excellent electronselective, hole-blocking characteristics, a very low r c , and a moderate J 0c . Because of its high conductivity, quasi-metallic TiN is able to act simultaneously as the metal electrode.…”

Section: Context and Scalementioning

confidence: 99%

Dual-Function Electron-Conductive, Hole-Blocking Titanium Nitride Contacts for Efficient Silicon Solar Cells

Yang

Liu

Bastiani

et al. 2019

Joule

103

124

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Yang and co-workers reported a dual-function, low-cost, high-performance titanium-nitride-based passivating contact for silicon solar cells. By the implementation of electron-conductive titanium nitride contact, which acts simultaneously as a surface passivating layer and metal electrode, a silicon solar cell with an efficiency of 20% is achieved using a simplified fabrication process. This work also expands the pool of available electron transport materials, from metal oxides to metal nitrides, for photovoltaic devices.

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Section: Context and Scalementioning

confidence: 99%

Dual-Function Electron-Conductive, Hole-Blocking Titanium Nitride Contacts for Efficient Silicon Solar Cells

Yang

Liu

Bastiani

et al. 2019

Joule

103

124

View full text Add to dashboard Cite

show abstract

“…1(b). TiN is use as front contact of lower subcell with work function of 4.3eV because of its excellent chemical and thermal stability and quasi-metallic conductivity and as a copper diffusion barrier for interconnect technologies [35,36]. A highly doped Back Surface Field (BSF) p ++ -Si used to minimize carrier recombination losses on the rear surface.…”

Section: Methodsmentioning

confidence: 99%

A novel design of CTZS/Si tandem solar cell: a numerical approach

et al. 2021

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Multijunction or tandem solar cells can split the solar spectrum over several subcells with different bandgaps to transform the sunlight into electricity more effectively than single-junction solar cells. The monolithic tandem design of third generation silicon solar energy materials is auspicious for photovoltaics.In this paper, the Simulation-based studies of copper zinc tin sul de/Silicon (CZTS/Si) tandem cells based on CZTS as an upper subcell and silicon as a lower subcell absorber layer have been performed using SCAPS-1D. This study aims to evaluate the CZTS tandem cells' performance based on the fact that both subcells are simulated to produce the best e ciency recorded at its bandgap. The Simulation and optimization of the single junction CZTS and Si solar cells were initially performed to t the state-of-art records e ciency of 11.65% and 18.7%, respectively. Further, both the upper and lower cell has evaluated at different thicknesses for tandem con guration after validation. Also, to obtain the current matching condition for tandem structure, the upper subcell's performance is investigated at different thickness ranges from 0.1 µm -1 µm while keeping the lower subcell thickness at 80µm. Thus, at optimized upper absorber thickness of 0.191 µm and lower subcell 80 µm at transmitted spectrum the current matching condition obtained and gave an e ciency of 10.6% and 11.9%, respectively. The maximum e ciency of ~ 23 is obtained for tandem design with enhancing open circuit voltage 1.4 V.

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“…Despite the progress already achieved for passivating contacts in enhancing carrier selectivity and device performance, their stability remains a critical issue to be addressed. Although a few CTL materials show reasonable stability (e.g., TiN), 59,219 most CTL materials are readily acknowledged to be susceptible to external stimuli. This is due on one hand to their intrinsic thermodynamic instability, 201,215 and on the other hand to the chemical reaction and elemental diffusion occurring at interfaces upon contact with other materials (such as c-Si, electrodes, etc.).…”

Section: Stabilitymentioning

confidence: 99%

Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

Wang

Zhang

et al. 2022

EcoMat

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The evolution of the contact scheme has driven the technology revolution of crystalline silicon (c-Si) solar cells. The state-of-the-art high-efficiency c-Si solar cells such as silicon heterojunction (SHJ) and tunnel oxide passivated contact (TOPCon) solar cells are featured with passivating contacts based on doped Si thin films, which induce parasitic optical absorption loss and require capitalintensive deposition processes involving flammable and toxic gasses. A promising solution to tackle this problem is to employ dopant-free passivating contact, involving the use of transparent and cost-effective wide band gap materials. In this review, we first introduce the dopant-free passivating contact, from carrier transport mechanisms, material classification to evaluation methods. Then we focus on the advances in different strategies to improve cell performance, including material property optimization, structural and interfacial engineering, as well as various post-treatments. At the end, the challenge and perspective of dopant-free passivating contact c-Si solar cells are discussed.

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Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

Cited by 5 publications

References 24 publications

Dual-Function Electron-Conductive, Hole-Blocking Titanium Nitride Contacts for Efficient Silicon Solar Cells

Dual-Function Electron-Conductive, Hole-Blocking Titanium Nitride Contacts for Efficient Silicon Solar Cells

A novel design of CTZS/Si tandem solar cell: a numerical approach

Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

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